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PDF D2007 Data sheet ( Hoja de datos )
| Número de pieza | D2007 | |
| Descripción | METAL GATE RF SILICON FET | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de D2007 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MECHANICAL DATA
A
B
C
1
4
M
2
3
F
D
E
G
HK
PIN 1
PIN 3
SOURCE
SOURCE
DA
PIN 2
PIN 4
IJ
DRAIN
GATE
DIM mm
A 24.76
B 18.42
C 45°
D 6.35
E 3.17
F 5.71
G 9.52
H 6.60
I 0.13
J 4.32
K 2.54
M 20.32
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 DIA
0.225
0.375
0.260
0.005
0.170
0.100
0.800
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
TetraFET
D2007UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 400MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from DC to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
29W
BVDSS
Drain – Source Breakdown Voltage
65V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
2A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 6/98
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet D2007.PDF ] | |
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