파트넘버.co.kr D2004UK 데이터시트 PDF


D2004UK 반도체 회로 부품 판매점

METAL GATE RF SILICON FET



Seme LAB 로고
Seme LAB
D2004UK 데이터시트, 핀배열, 회로
TetraFET
D2004UK
MECHANICAL DATA
B
(2 pls)
E
A
C2
1
3
54
G (4 pls)
F
K
D
PIN 1
PIN 3
PIN 5
HJ
I
DK
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
PIN 4
MN
DRAIN 1
GATE 2
DIM mm
A 6.45
B 1.65R
C 45°
D 16.51
E 6.47
F 18.41
G 1.52
H 4.82
I 24.76
J 1.52
K 0.81R
M 0.13
N 2.16
Tol. Inches Tol.
0.13 0.254 0.005
0.13 0.065R 0.005
5° 45° 5°
0.76 0.650 0.03
0.13 0.255 0.005
0.13 0.725 0.005
0.13 0.060 0.005
0.25 0.190 0.010
0.13 0.975 0.005
0.13 0.060 0.005
0.13 0.032R 0.005
0.02 0.005 0.001
0.13 0.085 0.005
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 28V – 1GHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from DC to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
58W
BVDSS
Drain – Source Breakdown Voltage *
65V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
2A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Prelim. 01/01


D2004UK 데이터시트, 핀배열, 회로
D2004UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
DrainSource
BVDSS Breakdown Voltage
PER SIDE
VGS = 0
ID = 10mA
65
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage *
gfs Forward Transconductance *
GPS
h
Common Source Power Gain
Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
VDS = 10V
ID = 0.4A
TOTAL DEVICE
PO = 10W
VDS = 28V
IDQ = 0.4A
f = 1GHz
1
0.36
10
40
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
PER SIDE
VDS = 0V VGS = 5V f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
Typ.
Max. Unit
V
0.4 mA
1 mA
7V
S
dB
%
24 pF
12 pF
1 pF
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHjcase
Thermal Resistance Junction Case
Max. 3.0°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Prelim. 01/01




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METAL GATE RF SILICON FET - Seme LAB