파트넘버.co.kr D2003 데이터시트 PDF


D2003 반도체 회로 부품 판매점

METAL GATE RF SILICON FET



Seme LAB 로고
Seme LAB
D2003 데이터시트, 핀배열, 회로
TetraFET
D2003UK
MECHANICAL DATA
AD
B
H
23
1
54
F
C
G
E
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 1GHz
PUSH–PULL
I
PIN 1
PIN 3
PIN 5
NM
O
DQ
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
GATE 1
JK
DRAIN 1
GATE 2
DIM mm
A 16.38
B 1.52
C 45°
D 6.35
E 3.30
F 14.22
G 1.27 x 45°
H 1.52
I 6.35
J 0.13
K 2.16
M 1.52
N 5.08
O 18.90
Tol.
0.26
0.13
5°
0.13
0.13
0.13
0.13
0.13
0.13
0.02
0.13
0.13
MAX
0.13
Inches
0.645
0.060
45°
0.250
0.130
0.560
0.05 x 45°
0.060
0.250
0.005
0.085
0.060
0.200
0.744
Tol.
0.010
0.005
5°
0.005
0.005
0.005
0.005
0.005
0.005
0.001
0.005
0.005
MAX
0.005
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
VHF/UHF COMMUNICATIONS
from 50 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
35W
BVDSS
Drain – Source Breakdown Voltage *
65V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
1A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Document Number 3416
Issue 1


D2003 데이터시트, 핀배열, 회로
D2003UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
DrainSource Breakdown
Voltage
PER SIDE
VGS = 0
ID = 10mA
65
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS
VGS(th)
gfs
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
VGS = 20V
ID = 10mA
VDS = 10V
VDS = 0
VDS = VGS
ID = 1A
1
0.18
GPS
η
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
TOTAL DEVICE
PO = 5W
VDS = 28V
IDQ = 0.2A
f = 1GHz
13
40
20:1
Ciss
Coss
Crss
PER SIDE
Input Capacitance
VDS = 28V VGS = 5V f = 1MHz
Output Capacitance
VDS = 28V VGS = 0 f = 1MHz
Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
Typ.
Max. Unit
V
1 mA
1 µA
7V
S
dB
%
12 pF
6 pF
0.5 pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHjcase
Thermal Resistance Junction Case
Max. 5.0°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Document Number 3416
Issue 1




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: Seme LAB

( semelab )

D2003 gate

데이터시트 다운로드
:

[ D2003.PDF ]

[ D2003 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


D200

SIP DC/DC Converters - uPD



D2001UK

METAL GATE RF SILICON FET - Seme LAB



D2002

METAL GATE RF SILICON FET - Seme LAB



D2002-

Stereo Headphone Amplifier - Shaoxing Silicore Technology



D2002UK

METAL GATE RF SILICON FET - Seme LAB



D2003

METAL GATE RF SILICON FET - Seme LAB



D2003UK

METAL GATE RF SILICON FET - Seme LAB



D2004UK

METAL GATE RF SILICON FET - Seme LAB



D2005

NPN Transistor - ROHM Semiconductor