파트넘버.co.kr D2002UK 데이터시트 PDF


D2002UK 반도체 회로 부품 판매점

METAL GATE RF SILICON FET



Seme LAB 로고
Seme LAB
D2002UK 데이터시트, 핀배열, 회로
MECHANICAL DATA
C
2
1
A
3
F
(2 pls)
H
J
N
(typ)
B
D
(2 pls)
MI
PIN 1
PIN 3
SOURCE
GATE
E KG
DP
PIN 2 DRAIN
DIM mm
A 16.51
B 6.35
C 45°
D 3.30
E 18.92
F 1.52
G 2.16
H 14.22
I 1.52
J 6.35
K 0.13
M 5.08
N 1.27 x 45°
Tol. Inches Tol.
0.25 0.650 0.010
0.13 0.250 0.005
5° 45° 5°
0.13 0.130 0.005
0.08 0.745 0.003
0.13 0.060 0.005
0.13 0.085 0.005
0.08 0.560 0.003
0.13 0.060 0.005
0.13 0.250 0.005
0.03 0.005 0.001
0.51 0.200 0.020
0.13 0.050 x 45° 0.005
TetraFET
D2002UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
VHF/UHF COMMUNICATIONS
from DC to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
29W
BVDSS
Drain – Source Breakdown Voltage
65V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
2A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Prelim. 12/00


D2002UK 데이터시트, 핀배열, 회로
D2002UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
ID = 10mA
65
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 5W
VDS = 28V
f = 1GHz
VDS = 0
VDS = VGS
ID = 0.4A
IDQ = 0.2A
1
0.36
13
40
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 0
VDS = 28V
VDS = 28V
VGS = –5V f = 1MHz
VGS = 0 f = 1MHz
VGS = 0 f = 1MHz
Typ.
Max. Unit
V
2 mA
1 µA
7V
S
dB
%
20 pF
11 pF
1 pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 6.0°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Prelim. 12/00




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METAL GATE RF SILICON FET - Seme LAB