파트넘버.co.kr D1020 데이터시트 PDF


D1020 반도체 회로 부품 판매점

METAL GATE RF SILICON FET



Seme LAB 로고
Seme LAB
D1020 데이터시트, 핀배열, 회로
TetraFET
D1020UK
MECHANICAL DATA
C
(2 pls)
HD
1
B
2
5
E
(4 pls)
F
I
3
4
G
(typ)
P
(2 pls) A
PIN 1
PIN 3
PIN 5
NM
O
DR
SOURCE (COMMON)
DRAIN 2
GATE 1
JK
PIN 2
PIN 4
DRAIN 1
GATE 2
DIM Millimetres Tol.
A 19.05 0.50
B 10.77 0.13
C 45°
D 9.78 0.13
E 5.71 0.13
F 27.94 0.13
G 1.52R 0.13
H 10.16 0.13
I 22.22 MAX
J 0.13 0.02
K 2.72 0.13
M 1.70 0.13
N 5.08 0.50
O 34.03 0.13
P 1.57R 0.08
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.062R
Tol.
0.020
0.005
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
150W – 28V – 400MHz
PUSH–PULL
FEATURES
• EXTRA LOW Crss
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 400 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
389W
BVDSS
Drain – Source Breakdown Voltage *
70V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
20A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Prelim. 11/00


D1020 데이터시트, 핀배열, 회로
D1020UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
IDSS
IGSS
VGS(th)
gfs
DrainSource Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
GPS
h
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
PER SIDE
VGS = 0
ID = 100mA
VDS = 28V
VGS = 0
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
VDS = 10V
ID = 5A
TOTAL DEVICE
PO = 150W
VDS = 28V
IDQ = 2A
f = 400MHz
70
1
4
10
50
20:1
Ciss
Coss
Crss
PER SIDE
Input Capacitance
VDS = 28V VGS = 5V f = 1MHz
Output Capacitance
VDS = 28V VGS = 0 f = 1MHz
Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
Typ.
Max. Unit
V
5 mA
1 mA
7V
S
dB
%
300 pF
150 pF
10 pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHjcase
Thermal Resistance Junction Case
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Max. 0.45°C / W
Prelim. 11/00




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D1020 gate

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