파트넘버.co.kr D1019 데이터시트 PDF


D1019 반도체 회로 부품 판매점

METAL GATE RF SILICON FET



Seme LAB 로고
Seme LAB
D1019 데이터시트, 핀배열, 회로
MECHANICAL DATA
C
12
4
A
3
B
D
PIN 1
PIN 3
DRAIN
GATE
PIN 2
PIN 4
SOURCE
SOURCE
DIM mm
A 26.16
B 5.72
C 45°
D 7.11
E 0.13
F 1.52
G 0.43
H 7.67
Tol.
0.13
0.13
0.13
0.02
0.13
0.20
REF
Inches
1.030
0.225
45°
0.280
0.005
0.55
0.060
0.120
Tol.
0.015
0.005
0.005
0.001
0.005
0.008
REF
TetraFET
D1019UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
50W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
5A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
6/99


D1019 데이터시트, 핀배열, 회로
D1019UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 20W
VDS = 28V
f = 175MHz
VDS = 0
VDS = VGS
ID = 1A
IDQ = 0.1A
1
0.8
16
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 28V
VDS = 28V
VDS = 28V
VGS = –5V f = 1MHz
VGS = 0 f = 1MHz
VGS = 0 f = 1MHz
Typ.
Max. Unit
V
1 mA
1 µA
7V
S
dB
%
60 pF
30 pF
2.5 pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 3.5°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
6/99




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: Seme LAB

( semelab )

D1019 gate

데이터시트 다운로드
:

[ D1019.PDF ]

[ D1019 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


D1010ADT

Trench MOS Barrier Schottky Rectifier - NIKO-SEM



D1010UK

METAL GATE RF SILICON FET - Seme LAB



D1011

METAL GATE RF SILICON FET - Seme LAB



D1011UK

METAL GATE RF SILICON FET - Seme LAB



D1012UK

METAL GATE RF SILICON FET - Seme LAB



D1013UK

METAL GATE RF SILICON FET - Seme LAB



D1014UK

METAL GATE RF SILICON FET - Seme LAB



D1015UK

METAL GATE RF SILICON FET - Seme LAB



D1016UK

METAL GATE RF SILICON FET - Seme LAB