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BF998A 반도체 회로 부품 판매점

N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode



Vishay Telefunken 로고
Vishay Telefunken
BF998A 데이터시트, 핀배열, 회로
BF998/BF998R/BF998RW
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input and mixer stages in UHF tuners.
Features
D Integrated gate protection diodes
D Low noise figure
D Low feedback capacitance
D High cross modulation performance
D Low input capacitance
D High AGC-range
D High gain
21
12
94 9279
13 579
34
BF998 Marking: MO
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
12
94 9278
43
95 10831
BF998R Marking: MOR
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
13 654
13 566
43
BF998RW Marking: WMO
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85011
Rev. 4, 23-Jun-99
www.vishay.de FaxBack +1-408-970-5600
1 (9)


BF998A 데이터시트, 핀배열, 회로
BF998/BF998R/BF998RW
Vishay Telefunken
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Tamb 60 °C
Symbol
VDS
ID
±IG1/G2SM
±VG1S/G2S
Ptot
TCh
Tstg
Value
12
30
10
7
200
150
–65 to +150
Unit
V
mA
mA
V
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthChA
Value
450
Unit
K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain current
ID = 10 mA,
–VG1S = –VG2S = 4 V
±IG1S = 10 mA,
VG2S = VDS = 0
±IG2S = 10 mA,
VG1S = VDS = 0
±VG1S = 5 V,
VG2S = VDS = 0
±VG2S = 5 V,
VG1S = VDS = 0
VDS = 8 V, VG1S = 0,
VG2S = 4 V
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
VDS = 8 V, VG2S = 4 V,
ID = 20 mA
VDS = 8 V, VG1S = 0,
ID = 20 mA
Type
Symbol
V(BR)DS
Min Typ Max Unit
12 V
±V(BR)G1SS 7
14 V
±V(BR)G2SS 7
14 V
±IG1SS
50 nA
±IG2SS
50 nA
BF998/BF998R/
BF998RW
BF998A/BF998RA/
BF998RAW
BF998B/BF998RB/
BF998RBW
IDSS
IDSS
IDSS
–VG1S(OFF)
4
4
9.5
18 mA
10.5 mA
18 mA
1.0 2.0 V
–VG2S(OFF)
0.6 1.0 V
www.vishay.de FaxBack +1-408-970-5600
2 (9)
Document Number 85011
Rev. 4, 23-Jun-99




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