파트넘버.co.kr BF904WR 데이터시트 PDF


BF904WR 반도체 회로 부품 판매점

N-channel dual-gate MOS-FET



NXP Semiconductors 로고
NXP Semiconductors
BF904WR 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
BF904WR
N-channel dual-gate MOS-FET
Product specification
File under Discrete Semiconductors, SC07
1995 Apr 25
Philips Semiconductors


BF904WR 데이터시트, 핀배열, 회로
Philips Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF904WR
FEATURES
Specially designed for use at 5 V supply voltage
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Superior cross-modulation performance during AGC.
PINNING
PIN
1
2
3
4
SYMBOL
DESCRIPTION
s, b source
d drain
g2 gate 2
g1 gate 1
APPLICATIONS
VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
handbook, halfpage
3
4
d
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT343R package. The transistor
consists of an amplifier MOS-FET with source and
substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
21
Top view
g2
g1
MAM192
s,b
Marking code: MC.
Fig.1 Simplified outline (SOT343R) and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
ID
Ptot
Tj
yfs
Cig1-s
Crs
F
PARAMETER
drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
CONDITIONS
f = 1 MHz
f = 800 MHz
MIN.
22
TYP.
25
2.2
25
2
MAX.
7
30
280
150
30
2.6
35
UNIT
V
mA
mW
°C
mS
pF
fF
dB
1995 Apr 25
2




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BF904WR

N-channel dual-gate MOS-FET - NXP Semiconductors