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PDF BF904AWR Data sheet ( Hoja de datos )
| Número de pieza | BF904AWR | |
| Descripción | N-channel dual gate MOS-FETs | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BF904A; BF904AR; BF904AWR
N-channel dual gate MOS-FETs
Product specification
Supersedes data of 1999 Feb 01
1999 May 14
1 page  
Philips Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF904A; BF904AR; BF904AWR
40
Y fs
(mS)
30
MLD268
20
10
0
50
0
50 100 150
Tj (oC)
Fig.5 Transfer admittance as a function of the
junction temperature; typical values.
hangdbaoinok, ha0lfpage
reduction
(dB)
10
MRA769
20
30
40
50
01234
VAGC (V)
f = 50 MHz.
Fig.6 Typical gain reduction as a function of
the AGC voltage; see Fig.21.
120
handbook, halfpage
Vunw
(dB µV)
110
MRA771
20
ID
(mA)
15
MLD270
VG2 S = 4 V 3 V 2.5 V
2V
100
90
80
0 10 20 30 40 50
gain reduction (dB)
VDS = 5 V; VGG = 5 V; fw = 50 MHz.
funw = 60 MHz; Tamb = 25 °C; RG1 = 120 kΩ.
Fig.7 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.21.
10
5
0
0
1.5 V
1V
0.4 0.8 1.2 1.6 2.0
VG1 S (V)
VDS = 5 V.
Tj = 25 °C.
Fig.8 Transfer characteristics; typical values.
1999 May 14
5
5 Page 
Philips Semiconductors
N-channel dual gate MOS-FETs
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
Product specification
BF904A; BF904AR; BF904AWR
SOT143B
DB
E AX
y
e
4
1
b1
e1
vM A
HE
bp w M B
3
2
A
A1
Q
c
Lp
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
b1
c
D
E
e e1 HE Lp Q
vw
y
mm
1.1
0.9
0.1
0.48 0.88
0.38 0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9 1.7
2.5 0.45 0.55
2.1 0.15 0.45
0.2
0.1
0.1
OUTLINE
VERSION
SOT143B
1999 May 14
IEC
REFERENCES
JEDEC
EIAJ
11
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BF904AWR.PDF ] | |
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