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Número de pieza | BF1205 | |
Descripción | Dual N-channel dual gate MOS-FET | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BF1205 (archivo pdf) en la parte inferior de esta página. Total 24 Páginas | ||
No Preview Available ! DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1205
Dual N-channel dual gate
MOS-FET
Product specification
2003 Sep 30
1 page Philips Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1205
16
handbook, halfpage
ID
(mA)
12
8
MGX430
(1)
(2)
(3)
4
(4)
(5)
(6)
0
012345
VGG (V)
(1) ID (b); RG1 = 120 kΩ.
(2) ID (b); RG1 = 150 kΩ.
(3) ID (b); RG1 = 180 kΩ.
(4) ID (a); RG1 = 180 kΩ.
(5) ID (a); RG1 = 150 kΩ.
(6) ID (a); RG1 = 120 kΩ.
Fig.3 Drain currents of MOS-FET a and b as
functions of VGG (see Fig.4).
handbook, halfpage
g1 (a)
g2
g1 (b)
R G1
VGG
d (a)
s
d (b)
MGX431
VGG = 5 V: amplifier a is OFF; amplifier b is ON.
VGG = 0 V: amplifier a is ON; amplifier b is OFF.
Fig.4 Functional diagram
2003 Sep 30
5
5 Page Philips Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1205
handbook1, 0h2alfpage
yis
(mS)
10
1
10−1
10−2
10
MGX441
b is
g is
102
f (MHz)
103
VDS (a) = 5 V; VG2-S (a) = 4 V; VDS (b) = VG1-S (b) = 0 V;
ID (a) = 12 mA.
Fig.14 Input admittance as a function of frequency;
typical values; amplifier a.
102
handbook, halfpage
|yfs|
(mS)
10
|yfs|
ϕ fs
MGX442 −102
ϕ fs
(deg)
−10
1 −1
10
102
f (MHz)
103
VDS (a) = 5 V; VG2-S (a) = 4 V; VDS (b) = VG1-S (b) = 0 V;
ID (a) = 12 mA.
Fig.15 Forward transfer admittance and phase as
a function of frequency; typical values;
amplifier a.
handbook1, 0h3alfpage
|yrs|
(µS)
102
10
MGX443 −103
ϕ rs
(deg)
handbook,1h0alfpage
yos
(mS)
ϕrs −102
1
|yrs| −10 10−1
MGX444
bos
gos
1 −1
10
102
f (MHz)
103
VDS (a) = 5 V; VG2-S (a) = 4 V; VDS (b) = VG1-S (b) = 0 V;
ID (a) = 12 mA.
Fig.16 Reverse transfer admittance and phase as
a function of frequency; typical values;
amplifier a.
10−2
10
102
f (MHz)
103
VDS (a) = 5 V; VG2-S (a) = 4 V; VDS (b) = VG1-S (b) = 0 V;
ID (a) = 12 mA.
Fig.17 Output admittance as a function of
frequency; typical values; amplifier a.
2003 Sep 30
11
11 Page |
Páginas | Total 24 Páginas | |
PDF Descargar | [ Datasheet BF1205.PDF ] |
Número de pieza | Descripción | Fabricantes |
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BF1201WR | N-channel dual-gate PoLo MOS-FETs | NXP Semiconductors |
BF1202 | N-channel dual-gate PoLo MOS-FETs | NXP Semiconductors |
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