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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1100; BF1100R
Dual-gate MOS-FETs
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
1995 Apr 25
Philips Semiconductors
Dual-gate MOS-FETs
Product specification
BF1100; BF1100R
FEATURES
• Specially designed for use at 9 to 12 V supply voltage
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
APPLICATIONS
• VHF and UHF applications such as television tuners and
professional communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistor consists of an amplifier MOS-FET with source
PINNING
PIN
1
2
3
4
SYMBOL
DESCRIPTION
s, b source
d drain
g2 gate 2
g1 gate 1
handbook, halfpage
4
3
1
Top view
2
MAM124
d
g2
g1
handbook, halfpage
3
4
d
g2
g1
21
s,b
Top view
MAM125 - 1
s,b
BF1100 marking code: M56.
Fig.1 Simplified outline (SOT143) and symbol.
BF1100R marking code: M57.
Fig.2 Simplified outline (SOT143R) and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
ID
Ptot
Tj
yfs
Cig1-s
Crs
F
PARAMETER
drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
1995 Apr 25
CONDITIONS
f = 1 MHz
f = 800 MHz
MIN.
−
−
−
−
24
−
−
−
TYP.
−
−
−
−
28
2.2
25
2
MAX.
14
30
200
150
33
2.6
35
−
UNIT
V
mA
mW
°C
mS
pF
fF
dB
2
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