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3CT08B 반도체 회로 부품 판매점

Sensitive Gate SCRs



JILIN SINO 로고
JILIN SINO
3CT08B 데이터시트, 핀배열, 회로
门极灵敏触发型晶闸管
R Sensitive Gate SCRs
3CT08B
主要参数 MAIN CHARACTERISTICS
封装 Package
IT(AV)
VDRM/VRRM
IGT
0.8 A
800 V
10-100 μA
用途
半交流开关
相位控制
APPLICATIONS
Half AC switching
Phase control
序号
Pin
1
2
3
引线名称
Description
阴极
K
门极
G
阳极
A
TO-92
产品特性
玻璃钝化芯片,高可靠性和一致性
低通态电流和高浪涌电流能力
环保 RoHS 产品
FEATURES
Glass-passivated mesa chip for reliability and uniform
Low on-state voltage and High ITSM
RoHS products
订货信息 ORDER MESSAGE
订货型号
Order codes
3CT08B -O-T-N-C
3CT08B -O-T-B-A
印记
Marking
3CT08B
3CT08B
无卤素
Halogen Free
NO
NO
封装
Package
TO-92
TO-92
包装
Packaging
袋装 Bag
编带 Brede
版本:201510C
1/5


3CT08B 데이터시트, 핀배열, 회로
R
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
3CT08B
项目
符号 数值 单位
Parameter
Symbol Value
Unit
断态重复峰值电压 Repetitive peak off-state voltage
反向重复峰值电压 Repetitive peak reverse voltage
通态平均电流 Average on-state current
通态方均根电流 On-state RMS current ( half sine wave)
非重复浪涌峰值通态电流 Non- repetitive surge peak on-state current
( half sine wave ,t=10ms)
VDRM
VRRM
ITAV
IT(RMS)
ITSM
800
800
0.8
1.2
12
V
V
A
A
A
I2t for fusing ( t=10ms)
I2t
0.72
A2s
门极峰值电流 Peak gate current
IGM 1
门极峰值电压 Peak gate voltage
VGM
5
反向门极峰值电压 Peak reverses gate voltage
VRGM
5
门极峰值功率 Peak gate power
PGM
2
平均门极功率 Average gate power( over any 20ms period)
PG(AV)
0.1
存储温度 Storage temperature
Tstg -40~150
操作结温 Operation junction temperature
TJ 125
电特性 ELECTRICAL CHARACTERISTIC (TC=25unless otherwise stated)
A
V
V
W
W
项目
符号
测试条件
最小 典型 最大 单位
Parameter
Symbol
Tests conditions
min typ max Unit
断 态 峰 值 重 复 电 流 Peak Repetitive
Blocking Current
IDRM
VDM=VDRM, Tj=125,
RGK=1KΩ
- - 0.1
反 向 峰 值 重 复 电 流 Peak Repetitive
Reverse Current
IRRM
VRM=VRRM, Tj=125,
RGK=1KΩ
- - 0.1
峰值通态电压 Peak on-state voltage
VTM ITM=1A
- 1.7
门极触发电流 Gate trigger current
IGT VDM=12V,IT=0.1A
10 - 100
门极触发电压 Gate trigger voltage
VGT VDM=12V,IT=0.1A
- 0.65 0.8
维持电流 Holding current
IH VDM=12V, IGT=1mA
- -1
动态特性 DYNAMIC CHARACTERISTICS (TC=25unless otherwise stated)
项目
符号
测试条件
最小 典型 最大
Parameter
Symbol
Tests conditions
min typ max
mA
mA
V
μA
V
mA
单位
Unit
断态临界电压上升率 Critical
rate of rise of off- state voltage
dV/dt
VDM=67% VDRM(MAX),
Tj=125,RGK=1KΩ
10 -
- V/μs
换 向 关 断 时 间 Circuit
commutaded turn-off time
VDM=67VDRMTj=125℃,VR=35V
tq ITM=1.6AdITM/dt=30A/μs
- 100 -
dV/dt=2V/μsRGK=1KΩ
μs
版本:201510C
2/5




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3CT08B gate

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Sensitive Gate SCRs - JILIN SINO