M81721FP 반도체 회로 부품 판매점
HIGH VOLTAGE HALF BRIDGE DRIVER
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 Mitsubishi Electric Semiconductor |
MITSUBISHI SEMICONDUCTORS <HVIC>
M81721FP
600V HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION
M81721FP is high voltage Power MOSFET and IGBT gate
driver for half bridge applications.
FEATURES
¡Floating supply voltage up to 600V
¡Low quiescent power supply current
¡Separate sink and source current output up to ±1A (typ)
¡Active Miller effect clamp NMOS with sink current up to –1A (typ)
¡Input noise filters
¡Over-current detection and output shutdown
¡High side under voltage lockout
¡FO pin which can input and output Fault signals to commu-
nicate with controllers and synchronize the shut down with
other phases
¡24-Lead SSOP PACKAGE
PIN CONFIGURATION (TOP VIEW)
NC
NC
VB
HPOUT
HNOUT1
HNOUT2
VS
NC
NC
NC
NC
NC
NC
HIN
LIN
FO_RST
CIN
GND
FO
VCC
LPOUT
LNOUT1
LNOUT2
VNO
APPLICATIONS
Power MOSFET and IGBT gate driver for Medium and Mi-
cro inverter or general purpose.
Outline: 24P2Q
BLOCK DIAGRAM
GND
www.DataSheet.net/
UV
Logic
Filter
HIN
LIN
CIN
+
Vref –
FO_RST
Interlock
& Noise Filter
Pulse
Generator
Protection
Logic
Filter
VCC Vreg
VREG Vref
Filter
VB
HPOUT
HNOUT1
HNOUT2
VS
VCC
LPOUT
LNOUT1
LNOUT2
VNO
FO
Aug. 2009
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
MITSUBISHI SEMICONDUCTORS <HVIC>
M81721FP
600V HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings indicate limitation beyond which destruction of device may occur. All voltage parameters are
absolute voltage reference to GND unless otherwise specified.
Symbol
VB
VS
VBS
VHO
VCC
VNO
VLO
VIN
VFO
VCIN
dVS/dt
Pd
Kq
Rth(j-c)
Tj
Topr
Tstg
Parameter
High side floating supply absolute voltage
High side floating supply offset voltage
High side floating supply voltage
High side output voltage
Low side fixed supply voltage
Power ground
Low side output voltage
Logic input voltage
FO input/output voltage
CIN input voltage
Allowable offset voltage slew rate
Package power dissipation
Linear derating factor
Junction-case thermal resistance
Junction temperature
Operation temperature
Storage temperature
Test conditions
VBS = VB–VS
HIN, LIN, FO_RST
Ta = 25°C, On PCB
Ta > 25°C, On PCB
Ratings
–0.5 ~ 624
VB–24 ~ VB+0.5
–0.5 ~ 24
VS–0.5 ~ VB+0.5
–0.5 ~ 24
VCC–24 ~ VCC+0.5
VNO–0.5 ~ VCC+0.5
–0.5 ~ VCC+0.5
–0.5 ~ VCC+0.5
–0.5 ~ VCC+0.5
±50
~ 1.25
~ 12.5
~ 80
–40 ~ 125
–40 ~ 100
–40 ~ 125
Unit
V
V
V
V
V
V
V
V
V
V
V/ns
W
mW/°C
°C/W
°C
°C
°C
RECOMMENDED OPERATING CONDITIONS
For proper operation the device should be used within the recommended conditions. All voltage parameters are absolute
voltages referenced to GND unless otherwise specified.
Symbol
Parameter
Test conditions
www.DataSheet.net/
VB High side floating supply absolute voltage
VS High side floating supply offset voltage
VBS High side floating supply voltage
VHO High side output voltage
VBS > 13.5V
VBS = VB–VS
VCC Low side fixed supply voltage
VNO Power ground
VLO Low side output voltage
VIN Logic input voltage
HIN, LIN, FO_RST
VFO FO input/output voltage
VCIN
CIN input voltage
Note: For proper operation, the device should be used within the recommend conditions.
Min.
VS+13.5
–5
13.5
VS
13.5
–0.5
VNO
0
0
0
Limits
Typ.
VS+15
—
15
—
15
—
—
—
—
—
Max.
VS+20
500
20
VS+20
20
5
VCC
VCC
VCC
5
Unit
V
V
V
V
V
V
V
V
V
V
THERMAL DERATING FACTOR CHARACTERISTIC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
00 25 50 75 100 125 150
Ambience Temperature (°C)
Aug. 2009
2
Datasheet pdf - http://www.DataSheet4U.co.kr/
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PDF 파일 내의 페이지 : 총 10 페이지
제조업체: Mitsubishi Electric Semiconductor
( mitsubishi )
M81721FP driver
데이터시트 다운로드 :
[ M81721FP.PDF ]
[ M81721FP 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
