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PDF L6398 Data sheet ( Hoja de datos )
| Número de pieza | L6398 | |
| Descripción | High-voltage high and low side driver | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de L6398 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
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L6398
High voltage high and low side driver
Features
■ High voltage rail up to 600 V
■ dV/dt immunity ±50 V/ns in full temperature
range
■ Driver current capability:
– 290 mA source,
– 430 mA sink
■ Switching times 75/35 ns rise/fall with 1 nF load
■ 3.3 V, 5 V TTL/CMOS input comparators with
hysteresis
■ Integrated bootstrap diode
■ Fixed 320 ns dead-time
■ Interlocking function
■ Compact and simplified layout
■ Bill of material reduction
■ Flexible, easy and fast design
Applications
■ Motor driver for home appliances, factory
automation, industrial drives and fans.
$)0
3/
Description
The L6398 is a high-voltage device manufactured
with the BCD “OFF-LINE” technology. It is a single
chip half-bridge gate driver for N-channel power
MOSFET or IGBT.
The high side (floating) section is designed to
stand a voltage rail up to 600 V. The logic inputs
arewww.DataSheet.net/ CMOS/TTL compatible down to 3.3 V for easy
interfacing microcontroller/DSP.
Table 1.
Device summary
Order codes
L6398N
L6398D
L6398DTR
Package
DIP-8
SO-8
SO-8
Packaging
Tube
Tube
Tape and reel
April 2011
Doc ID 18199 Rev 3
1/16
www.st.com
16
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
L6398
3
Truth table
Table 3.
Truth table
Input
LIN
H
L
L
H
HIN
L
H
L
H
Truth table
Output
LVG HVG
LL
LL
HL
LH
www.DataSheet.net/
Doc ID 18199 Rev 3
5/16
Datasheet pdf -
5 Page 
L6398
8 Bootstrap driver
Bootstrap driver
A bootstrap circuitry is needed to supply the high voltage section. This function is normally
accomplished by a high voltage fast recovery diode (Figure 6). In the L6398 a patented
integrated structure replaces the external diode. It is realized by a high voltage DMOS,
driven synchronously with the low side driver (LVG), with diode in series, as shown in
Figure 7. An internal charge pump (Figure 7) provides the DMOS driving voltage.
8.1 CBOOT selection and charging
To choose the proper CBOOT value the external MOS can be seen as an equivalent
capacitor. This capacitor CEXT is related to the MOS total gate charge:
Equation 1
CEXT
=
Q-----g---a---t-e-
Vgate
The ratio between the capacitors CEXT and CBOOT is proportional to the cyclical voltage loss.
It has to be:
Equation 2
CBOOT >>> CEXT
e.g.: if Qgate is 30 nC and Vgate is 10 V, CEXT is 3 nF. With CBOOT = 100 nF the drop would be
300 mV.
www.DataSheet.net/
If HVG has to be supplied for a long time, the CBOOT selection has to take into account also
the leakage and quiescent losses.
e.g.: HVG steady state consumption is lower than 190 μA, so if HVG TON is 5 ms, CBOOT has
to supply 1 μC to CEXT. This charge on a 1 μF capacitor means a voltage drop of 1V.
The internal bootstrap driver gives a great advantage: the external fast recovery diode can
be avoided (it usually has great leakage current).
This structure can work only if VOUT is close to GND (or lower) and in the meanwhile the
LVG is on. The charging time (Tcharge) of the CBOOT is the time in which both conditions are
fulfilled and it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop due to the DMOS RDSon (typical value:
120 Ω). At low frequency this drop can be neglected. Anyway increasing the frequency it
must be taken in to account.
The following equation is useful to compute the drop on the bootstrap DMOS:
Equation 3
Vdrop
=
Ich argeRdson → Vdrop
=
---Q-----g--a---t--e---
Tch arge
Rd
son
Doc ID 18199 Rev 3
11/16
Data
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet L6398.PDF ] | |
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