파트넘버.co.kr FW344 데이터시트 PDF


FW344 반도체 회로 부품 판매점

Motor Driver Applications



Sanyo Semicon Device 로고
Sanyo Semicon Device
FW344 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
Ordering number : ENN7616
FW344
N-Channel and P-Channel Silicon MOSFETs
FW344
Motor Driver Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
Composite type with an N-channel MOSFET and a P-
channel MOSFET driving from a 4V supply voltage
contained in a single package.
High-density mounting.
Package Dimensions
unit : mm
2129
[FW344]
85
Specifications
Absolute Maximum Ratings at Ta=25°C
1
5.0
4
0.595 1.27 0.43
1 : Source1
2 : Gate1
0.2
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW10s)
Drain Current (PW100ms)
Drain Current (PW10µs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
ID
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
duty cycle1%
duty cycle1%
duty cycle1%
Mounted on a ceramic board (2000mm2!0.8mm)1unit
Mounted on a ceramic board (2000mm2!0.8mm)
Ratings
N-channel P-channel
30 --30
±20 ±20
3.5 --4
4 --4.5
6 --6.5
14 --16
1.4
1.7
150
--55 to +150
Unit
V
V
A
A
A
A
W
W
°C
°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Marking : W344
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
Ratings
min typ max
Unit
30 V
1 µA
±10 µA
1.2 2.6 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71003 TS IM TA-100756 No.7616-1/6
Datasheet pdf - http://www.DataSheet4U.net/


FW344 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
FW344
Continued from preceding page.
Parameter
Symbol
Conditions
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=10V, ID=3.5A
ID=3.5A, VGS=10V
ID=1.8A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=3.5A
VDS=10V, VGS=10V, ID=3.5A
VDS=10V, VGS=10V, ID=3.5A
IS=3.5A, VGS=0
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--4A
ID=--4A, VGS=--10V
ID=--2A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--10V, ID=--4A
VDS=--10V, VGS=--10V, ID=--4A
VDS=--10V, VGS=--10V, ID=--4A
IS=--4A, VGS=0
min
3.0
Ratings
typ
5.3
64
105
180
42
25
7
15
19
5
5.0
0.9
0.6
0.88
max
84
150
1.2
Unit
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
--30
--1.2
3.5 5
58
105
510
115
78
11
55
35
40
11
2.4
1.7
--0.9
V
--1 µA
±10 µA
--2.3 V
S
78 m
147 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.5 V
Electrical Connection
876
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1234
(Top view)
Switching Time Test Circuit
[N-channel] VIN
10V
0V
VIN
VDD=15V
ID=3.5A
RL=4.3
PW=10µs
D.C.1%
D VOUT
G
[P-channel]
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --15V
ID= --4A
RL=3.75
D VOUT
FW344
P.G 50S
FW344
P.G 50S
No.7616-2/6
Datasheet pdf - http://www.DataSheet4U.net/




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