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PDF BA5955FP Data sheet ( Hoja de datos )
| Número de pieza | BA5955FP | |
| Descripción | Power Driver | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Structure
:
Product Name :
Device Name :
Silicon Monolithic Integrated Circuit
Power Driver for DVD-RAMs
BA5955FP
www.DataSheet4U.com 1/5
Features
: • 2-ch current feedback-type BTL driver
• Use of an HSOP25PIN power package allows downsizing of the set.
• A wide dynamic range
• A built-in thermal shutdown circuit installed.
• The pre stage (PRE part) and the output stage (POW part) are separated to
achieve an efficient drive.
• A built-in standby function installed.
{ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Parameter
Symbol
Power Supply Voltage
Vcc
Power Dissipation
Pd
Maximum Output
Current
Operating Temperature
Range
Storage Temperature
Range
Iomax
Topr
Tstg
Limits
18
1.45*1
1*2
-35 to 85
-55 to 150
Unit
W
A
°C
°C
*1 When mounted on the glass/epoxy board with the size: 70 mm×70 mm, the thickness: 1.6 mm, and
the rate of copper foil occupancy area: 3% or less.
Over Ta=25°C, derating at the rate of 11.6mW/°C.
*2 The power dissipation should be specified within the ASO range.
{ OPERATING CONDITIONS
Parameter
Pre-stage Power Supply
Voltage
Output-stage Power
Supply Voltage
Symbol
PreVcc
PowVcc
Limits
Unit
PowVcc+3 to 14 V
4.5 to 11
V
This product has not been checked for the strategic materials (or service) defined in the Foreign
Exchange and Foreign Trade Control Low of Japan so that a verification work is required before
exporting it.
Not designed for radiation resistance.
REV. A
1 page  
www.DataSheet4U.com 5/5
(15) About earth wiring patterns
When a small signal GND and a large current GND are provided, it is recommended that the large
current GND pattern and the small signal GND pattern should be separated and grounded at a single
point of the reference point of the set in order to prevent the voltage of the small signal GND from being
affected by a voltage change caused by the resistance of the pattern wiring and the large current.
Make sure that the GND wiring patterns of the external components will not change, too.
(16) This IC is a monolithic IC which has a P+ isolations and P substrate to isolate elements each other.
This P layer and an N layer in each element form a PN junction to construct various parasitic elements.
Due to the IC structure, the parasitic elements are inevitably created by the potential relationship.
Activation of the parasitic elements can cause interference between circuits and may result in a
malfunction or, consequently, a fatal damage. Therefore, make sure that the IC must not be used
under conditions that may activate the parasitic elements, for example, applying the lower voltage than
the ground level (GND, P substrate) to the input terminals.
In addition, do not apply the voltage to input terminals without applying the power supply voltage to the
IC. Also while applying the power supply voltage, the voltage of each input terminal must not be over
the power supply voltage, or within the guaranteed values in the electric characteristics.
<Supplemental Remarks>
Current feedback driver
The transfer gain (output current/input current) can be determined by the following equation:
gm
=
1
2Rd
(A/V)
Rd = Resistance for current detection (Ω)
REV. A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BA5955FP.PDF ] | |
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