파트넘버.co.kr iT5025 데이터시트 PDF


iT5025 반도체 회로 부품 판매점

8 Vpp optical modulator driver



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Iterra
iT5025 데이터시트, 핀배열, 회로
iT5025
40-Gb/s, 8-Vpp Optical Modulator Driver
Description
The iT5025 is a broadband GaAs MMIC traveling wave amplifier that delivers high output
power and moderate gain from 30 kHz to 40 GHz. It is well suited for use as a general-
purpose, extremely broadband driver in OC-768 40 Gb/s optical communication systems,
as well as any broadband application requiring flat gain response and excellent port
matches.
www.DataSheet4U.com
Features
Seven P-HEMT cascode stages provide 8 Vpp output voltage to drive a LiNbO3 external
modulator. The iT5025 incorporates advanced MBE technology, Ti-Pt-Au gate metallization,
silicon nitride passivation, and polyimide for scratch protection. Low-frequency extension
capabilities are also provided.
Frequency range: 30 kHz to 40 GHz
Gain: 10 dB
Gain flatness: ±0.7 dB
Output voltage: 8 Vpp
P1dB at 20 GHz: +21 dBm
Psat at 20 GHz: +23 dBm
Return loss
Input: –12 dB
Output: –10 dB
Low-frequency operation
Available in die form
Absolute
Maximum
Ratings
Symbol
Vdd
Idd
Vg1
Vg2
PDC
Pin
Tch
Tcase
Tmax
Parameters/conditions
Positive drain voltage
Total drain current
First gate voltage
Second gate voltage
DC power dissipation
RF input power
Operating channel temperature
Operating case temperature
Maximum assembly temperature
Min.
Typ.
Max.
9
500
3
Units
V
mA
V
8V
4W
25 dBm
160 ºC
-40 to +95
310
ºC
ºC
www.iterrac.com
This is a Production data sheet. See “Product Status Definitions”
on Web site or in catalog for latest development status.
June 9, 2006 Doc. 4074 Rev 1
1
iTerra Communications
2400 Geng Road, Ste. 100, Palo Alto, CA 94303
Phone (650) 424-1937, Fax (650) 424-1938


iT5025 데이터시트, 핀배열, 회로
iT5025
40-Gb/s, 8-Vpp Optical Modulator Driver
Electrical
Characteristics
1. Small signal data
measured in wafer
Form with T=25°C.
www.DataSheet42U. .Pcoemrformance may
be extended to lower
frequencies by
means of off-chip
circuitry.
Test conditions:
Vdd = 7 V,
Ids(RF) = 210 mA
Symbol
BW
S21
RLin
RLout
S12
GD
Vout
Parameters/conditions
3 dB bandwidth
Small gain signal
Input return loss
Output return loss
Isolation
Group delay up to 40 GHz
Bit rate
Saturated output voltage
Power detector output
Power detector output (RF off)
Eye crossing control (by means of Vg)
Voltage control (by means of Vd)
Min.
5
30
5
Typ.
10
-15
-12
-35
±10
43.5
+8
0.37
6.8
Max.
41
70
8
Units
GHz
dB
dB
dB
dB
Ps
Gb/s
Vpp
V/Vpp
V
%
V
DC
Specifications/
Physical
Properties
1. Measured in wafer
form with Tchuck = 25° C
Symbol
IDSS
VP
VG2
IdSOFF (VG1)
IdOFF (VG2)
Parameters/conditions
Saturated drain current
(Vdd=6.0 V, Vg1=0.0 V, Vg2 = open circuit)
First gate pinch-off voltage
(Vdd = 7.0 V, Idd = 10 mA, Vg2 = open circuit)
Second gate voltage self biased
(Vdd = 7.0 V, Vg1= 0.0 V, Idd= 10 mA)
First gate pinch-off current
(Vdd=7.0 V, Vg1= -3.5 V, Vg2 = open circuit)
Second gate pinch-off current
(Vdd = 7.0 V, Vg1 = 0.0 V, Vg2= -3.5 V)
Min.
Typ.
420
Max Units
mA
-1.8 V
NA V
55 mA
NA mA
Biasing and
Operation
The iT5025 amplifier is biased with a single positive drain supply (VDD) and single
negative gate supply (Vg1). The recommended bias conditions for the iT5025 are Vdd=
7.0 V, Idd = 220 mA. To achieve this drain current level, Vg1 is typically biased
between –0.4 V and –0.5 V. Vg2 must be set at approximately 3.5 V. The gate voltage
(Vg1) MUST be applied prior to the drain voltage (Vdd) during power up and removed
after the drain voltage is removed during power down. Drain bias Vdd can be applied
through an external bias tee at the RF output pad. External coupling capacitors are
needed on RFIN and RFOUT ports. The drain bias pad is connected to RFOUT.
www.iterrac.com
This is a Production data sheet. See “Product Status Definitions”
on Web site or in catalog for latest development status.
June 9, 2006 Doc. 4074 Rev 1
2
iTerra Communications
2400 Geng Road, Ste. 100, Palo Alto, CA 94303
Phone (650) 424-1937, Fax (650) 424-1938




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