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PDF RIC7113A4 Data sheet ( Hoja de datos )
| Número de pieza | RIC7113A4 | |
| Descripción | RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 94703
RIC7113A4
RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
Features
Product Summary
n Total dose capability to 100K Rad (Si)
n Floating channel designed for bootstrap operation
n Fully operational to +400V
n Tolerant to negative transient voltage
n dV/dt immune
n Gate drive supply range from 10 to 20V
n Undervoltage lockout for both channels
n Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n CMOS Schmitt-triggered inputs with pull-down
n Cycle by cycle edge-triggered shutdown logic
n Matched propagation delay for both channels
n Outputs in phase with inputs
n Hermetically Sealed
n Lightweight
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond
which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Ther-
mal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
VOFFSET
IO+/-
VOUT
ton/off (typ.)
Delay Matching(typ.)
400V max.
2A / 2A
10 - 20V
120 & 100 ns
5 ns
Description
The RIC7113A4 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL outputs. The output drivers
feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applications.
The floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration
which operates up to 400 volts.
Symbol
VB
VS
VHO
VCC
VLO
VDD
VSS
VIN
dVs/dt
PD
RthJA
TJ
TS
TL
Parameter
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Allowable Offset Supply Voltage Transient (Figure 2)
Package Power Dissipation @ TA ≤ +25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Weight
Min. Max.
-0.5 VS + 20
— 400
VS - 0.5
-0.5
VB + 0.5
20
-0.5
-0.5
VCC - 20
VSS - 0.5
—
VCC + 0.5
VSS + 20
VCC + 0.5
VDD + 0.5
50
— 0.6
— 210
-55 125
-55 150
— 300
0.6(typical)
Units
V
V/ns
W
°C/W
°C
g
www.irf.com
1
6/25/03
1 page  
www.DataSheet4U.com
Radiation characteristics
RIC7113A4
International Rectifier radiation hardened Gate Drivers have been characterized in heavy ion environment
for Single Event Effects (SEE). Single Event Effects characterization data is illustrated below. For Static Bias
Test Conditions refer to figure 8.
Single Event Effect Safe Operating Area
Ion LET
Energy
MeV/(mg/cm2)) (MeV)
Br 37
284
I 60
344
Au 82
346
I 85
344
Au 100
346
Angle
(degrees)
0
0
0
45
35
@VBS=-10V
400
325
250
400
400
VS (V)
@VBS=-15V
400
250
200
400
400
Note: VCC/VDD = 20V, except for LET=100, then VCC/VDD = 17.5V
@VBS=-17.5V
400
200
175
350
350
450
400
350
300
250
200
150
100
50
0
-10
STATIC BIAS
-15
VB (V)
Br, 0° angle
I, 0° angle
Au, 0° angle
I, 45° angle
Au, 35° angle
-17.5
Single Event Effect, Safe Operating Area
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RIC7113A4.PDF ] | |
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