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PDF 33198 Data sheet ( Hoja de datos )
| Número de pieza | 33198 | |
| Descripción | Automotive High-Side TMOS Driver | |
| Fabricantes | Freescale Semiconductor | |
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Technical Data
Automotive High-Side TMOS
Driver
Document Number: MC33198
Rev. 2.0, 11/2006
33198
The MC33198 is a high-side TMOS driver, dedicated to automotive
applications. It is used in conjunction with an external power MOSFET
for high-side drive applications. The device can drive and protect a
HIGH-SIDE TMOS DRIVER
large variety of MOSFETs. The device has a CMOS compatible input
control, charge pump to drive the MOSFET gate, and fault detection
circuitry based on programmable VDS monitoring to detect shorted
loads. It also includes a programmable timer function to eliminate
undesired switch off due to in rush currents, and a status pin which
reports the output status of both on and off MOSFET states. The device
uses few external components and offers an economical solution to
large current high side switches. It also has PWM capability up to 1kHz.
Features
D SUFFIX
EF SUFFIX (PB-FREE)
98ASB42564B
8-PIN SOICN
• Designed for Automotive High Side Driver Application
• Works with a Wide Variety of N-Channel Power MOSFETs
• PWM Capability
ORDERING INFORMATION
• On Board Charge Pump Capable of Charging 25nF in less than 1ms
with No External Components Required
• Drive Inductive Load with No External Clamp Circuitry Required
• CMOS Logic Compatible Input Control
• TMOS Over Current and Short Circuit Protection
Device
MC33198D
MCZ33198EF/R2
Temperature
Range (TA)
-40°C to 125°C
Package
8 SOICN
• Fault Output to Report an MOSFET Overcurrent Condition
• Output Status Available when MOSFET is On or Off
• Extended Temperature Range from -40°C to 125°C
• Protected Against Automotive Transients with few External Components
• Overvoltage and Undervoltage Shutdown
• Pb-Free Packaging Designated by Suffix Code EF
MCU
5.0V
33198
VCC
DRN
INPUT
GATE
STATUS
SRC
TIMER
GND
V BAT
LOAD
Figure 1. 33198 Simplified Application Diagram
Freescale Semiconductor, Inc. reserves the right to change the detail specifications,
as may be required, to permit improvements in the design of its products.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
1 page  
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 20 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol Min Typ Max Unit
SRC PIN 1
Leakage Current
DRN PIN 2
Threshold Current
DRN Leakage, Input Off, VCC Pin Open
GATE PIN 4
Output On Voltage at 1ms (Charge Pump ON)
Turn Off Current
with NO Over VDS condition and VOUT >0.5V
with Over VDS condition and VOUT >0.5V
Output Off Voltage.
(Charge Pump OFF and VCC Pin Open)
Gate Discharge Current. (VCC Pin Open)
Turn On Time
Cl = 25nF ; 7.0V < VCC < 10V ; VOUT > VCC+7.0
Cl = 25nF ; 10V < VCC < 20V ; VOUT > VCC+10
ILSRC
ITHR
ILEAK
VON
IOUTN
IOUTW
VOFF
IOFF
TON
-10 -
54 81
--
Vcc + 7.0
70 110
5.0 10
0.0 -
- 5.0
--
--
10
102
10
Vcc+15
150
15
0.9
-
-
1.0
1.0
µA
µA
µA
V
µA
µA
V
µA
ms
VCC PIN 5
Supply Voltage Range
Quiescent Supply Current ; In = 0V
at VCC = 7.0V
at VCC = 20V
Supply Current ; In = 5.0V
Over Voltage Threshold
Under Voltage Threshold
STATUS PIN 6
Output Voltage @ I = 1mA
INPUT Pin 7
Input Low Voltage
Input High Voltage
Input Hysteresis
Input Pull Down Resistor. VIN >11V
Open Input Voltage
VCC
ICCQ
ICC
VOV
VUR
VOL
VIL
VIH
VHYS
RIN
VIOP
7.0 - 20 V
mA
- 1.8 4.0
- 2.8 6.0
1.0 - 35 mA
22 28 34 V
-
6.0 7.0
V
0.1 0.4 1.5
V
- - 1.5 V
3.5 -
-V
0.8 -
-V
20 36 100 kΩ
- - 1.0 V
Analog Integrated Circuit Device Data
Freescale Semiconductor
33198
5
5 Page 
FUNCTIONAL DESCRIPTION
INTRODUCTION
FUNCTIONAL DESCRIPTION
INTRODUCTION
The MC33198 is a high side TMOS driver, dedicated to
automotive applications. It is used in conjunction with an
external power MOSFET for high side drive applications. The
device can drive and protect a large variety of MOSFETs.
The device has a CMOS compatible input control, charge
pump to drive the MOSFET gate, and fault detection circuitry
based on programmable VDS monitoring to detect shorted
loads. It also includes a programmable timer function to
eliminate undesired switch off due to in rush currents, and a
status pin which reports the output status of both on and off
MOSFET states. The device uses few external components,
and offers an economical solution to large current high side
switches. It also has PWM capability up to 1kHz.
POWER SUPPLY
The MC33198 can be supplied from the battery line. It is
designed with a 60V technology, making it able to sustain up
to 60V transient pulses. In the off state, with pin 7 low, the
supply current can be up to 5.0mA, and in operation, pin 7
high, the current up to 25mA. The device has an
undervoltage detection and shutdown near 7.0V. Below this
value the MOSFET is turned off. There is also a 25V
overvoltage detection which switches off the output pin 4 to
protect both the MOSFET and the load when VCC is higher
than 25V.
CHARGE PUMP
The device incorporates a self running charge pump with
an internal capacitor and is connected at Gate pin 4. To
prevent oscillation, a serial resistor can be added. The charge
pump is able to charge a 25nF capacitor in less than 1ms.
This allows the MC33198 to have a rapid response time and
to drive the external TMOS gate very quickly, allowing fast
switching on of the load. The device has an internal 15V
zener diode between pin 4 and 1, to clamp the Gate-to-
Source voltage and protect the MOSFET gate oxide from
destruction. See Dynamic Electrical Characteristics on page
7 for details.
BAND GAP AND REFERENCE CURRENTS
The MC33198 has an internal band gap reference voltage
which generates all the internal thresholds. This band gap is
also used to generate internal reference currents necessary
for proper operation of the device. These currents are :
Pin 2 : Drain current (typically 80mA).
Pin 4 : High and low gate discharge currents (typically
100mA and 10mA).
Pin 8 : Timer charge current (10mA typical).
All these currents are derived from the same reference
voltage and internal resistor. Their accuracy and variability is
approximately +-25% over the full temperature and voltage
range. In addition, a passive pull down current of 5.0mA
maintains the gate of the MOSFET below 0.9V when the
device has no supply, ensuring that the MOSFET remains off.
This passive pulldown current is operating even if device
VCC (pin 5) is not powered up.
INPUT CIRCUITRY
The Input pin (pin 7) of the device is CMOS compatible and
can be directly connected to a microcontroller. The input
current is determined by an internal pull down resistor,
typically 36kW. A hysteresis of 0.8 V minimum is present at
this input.
OUTPUT STATUS
The device has a status output (pin 6) which has an open
collector structure. This pin is used to report the MOSFET
overload condition or the LOAD status when the MOSFET is
off. The device Pin 1 (Source) is compared to a
programmable threshold at Pin 2, in both the on and off state
of the MOSFET. This allows the detection of the MOSFET
over VDS or over load conditions when the MOSFET is on
and the load short to VBAT monitoring, when the MOSFET is
in the off state. This status pin is normally connected to a pull-
up resistor and a micro input, and can drive up to 1.0mA.
TIMER
The Timer pin (pin 8) is used in conjunction with an
external capacitor to create a delay between the overload
detection and the shutdown of the MOSFET. In case of over
load, the internal current source pin 8 will charge the
capacitor. When the voltage at pin 8 reaches the 5.5V
threshold, the internal C3 comparator will be triggered and
switch off the output to protect the MOSFET. The fault and
the MOSFET turn off condition are latched and are reset by
switching the input off and on. The delay between the
overload detection and actual MOSFET turn off is used to
allow a temporary overload which will prevent the system
from switching off during possible inrush currents or
transients.
MOSFET PROTECTION AND OUTPUT VOLTAGE
MONITORING
The MC33198 has the ability to sense the output MOSFET
source voltage and compare it to a predetermined threshold.
This threshold is programmable, using the internal reference
current of 80mA and an external resistor connected at pin 2
(DRN). The device can monitor the output load voltage, as
well as protect the MOSFET in case of overload.
The overload detection threshold must be adapted to the
MOSFET itself depending on the load to be driven and the
thermal capability of the MOSFET. In practice, the maximum
acceptable VDS of the MOSFET should be determined and
based upon the MOSFET maximum power dissipation.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33198
11
11 Page | ||
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| PDF Descargar | [ Datasheet 33198.PDF ] | |
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