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NUD3105 반도체 회로 부품 판매점

Inductive Load Driver



ON Semiconductor 로고
ON Semiconductor
NUD3105 데이터시트, 핀배열, 회로
NUD3105
Integrated Relay,
Inductive Load Driver
This device is used to switch inductive loads such as relays,
solenoids incandescent lamps , and small DC motors without the need
of a free−wheeling diode. The device integrates all necessary items
such as the MOSFET switch, ESD protection, and Zener clamps. It
accepts logic level inputs thus allowing it to be driven by a large
variety of devices including logic gates, inverters, and
microcontrollers.
Features
Provides a Robust Driver Interface Between DC Relay Coil and
Sensitive Logic Circuits
Optimized to Switch Relays from 3.0 V to 5.0 V Rail
Capable of Driving Relay Coils Rated up to 2.5 W at 5.0 V
Internal Zener Eliminates the Need of Free−Wheeling Diode
Internal Zener Clamp Routes Induced Current to Ground for Quieter
Systems Operation
Low VDS(on) Reduces System Current Drain
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These are Pb−Free Devices
Typical Applications
Telecom: Line Cards, Modems, Answering Machines, FAX
Computers and Office: Photocopiers, Printers, Desktop Computers
Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette
Recorders
Industrial:Small Appliances, Security Systems, Automated Test
Equipment, Garage Door Openers
Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches,
Lamp Drivers
http://onsemi.com
RELAY/INDUCTIVE
LOAD DRIVER
0.5 AMPERE, 8.0 VOLT CLAMP
MARKING
DIAGRAMS
SOT−23
(TO−236)
CASE 318
JW4 M G
G
1
6
1
SC−74
CASE 318F
STYLE 7
JW4 D G
G
JW4
M
D
G
= Device Code
= Date Code*
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package Shipping
NUD3105LT1G
SOT−23 3000 / Tape &
(Pb−Free)
Reel
NUD3105DMT1G
SOT−74 3000 / Tape &
(Pb−Free)
Reel
SZNUD3105DMT1G SOT−74 3000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 11
1
Publication Order Number:
NUD3105/D


NUD3105 데이터시트, 핀배열, 회로
Drain (3)
NUD3105
Drain (6)
Drain (3)
Gate (1)
1.0 k
300 k
Gate (2)
1.0 k
300 k
1.0 k
300 k
CASE 318
Source (2)
Source (1)
Source (4)
CASE 318F
Figure 1. Internal Circuit Diagrams
Gate (5)
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Symbol
Rating
Value
Unit
VDSS
VGS
ID
Ez
Ezpk
TJ
TA
Tstg
PD
Drain to Source Voltage − Continuous
Gate to Source Voltage – Continuous
Drain Current – Continuous
Single Pulse Drain−to−Source Avalanche Energy (TJinitial = 25°C) (Note 2)
Repetitive Pulse Zener Energy Limit (DC v 0.01%) (f = 100 Hz, DC = 0.5)
Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
Total Power Dissipation (Note 1)
Derating Above 25°C
SOT−23
6.0
6.0
500
50
4.5
150
−40 to 85
−65 to +150
225
1.8
Vdc
Vdc
mA
mJ
mJ
°C
°C
°C
mW
mW/°C
Total Power Dissipation (Note 1)
Derating Above 25°C
SC−74
380 mW
1.5 mW/°C
RqJA
Thermal Resistance, Junction−to−Ambient
SOT−23
SC−74
556 °C/W
329
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL_STD−883, Method 3015.
Machine Model Method 200 V.
2. Refer to the section covering Avalanche and Energy.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
OFF CHARACTERISTICS
VBRDSS
BVGSO
Drain to Source Sustaining Voltage (Internally Clamped), (ID = 10 mA)
Ig = 1.0 mA
IDSS
Drain to Source Leakage Current
(VDS = 5.5 V , VGS = 0 V, TJ = 25°C)
(VDS = 5.5 V, VGS = 0 V, TJ = 85°C )
IGSS
Gate Body Leakage Current (318)
(VGS = 3.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V)
Gate Body Leakage Current (318F)
(VGS = 3.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V)
Min Typ Max Unit
6.0 8.0 9.0
− − 8.0
− − 15
− − 15
5.0 − 19
− − 50
5.0 − 35
− − 65
V
V
mA
mA
mA
http://onsemi.com
2




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