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Toshiba Semiconductor |
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RN4612
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4612
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
l Includeing two devices in SM6 (super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1: 22kΩ
(Q1, Q2 Common)
Q1 Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Q2 Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
−50
−50
−5
−100
Rating
50
50
5
100
JEDEC
Unit
EIAJ
V TOSHIBA
V Weight: 0.015g
V
mA
―
SC-74
2-3N1A
Unit
V
V
V
mA
1 2001-06-05
Q1, Q2 Common Maximum Ratings (Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
* Total rating
Symbol
PC *
Tj
Tstg
Rating
300
150
−55~150
Unit
mW
°C
°C
Marking
Equivalent Circuit (Top View)
RN4612
2 2001-06-05
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