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PDF IXBD4411 Data sheet ( Hoja de datos )
| Número de pieza | IXBD4411 | |
| Descripción | (IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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ISOSMARTTM Half Bridge Driver Chipset
Type
IXBD4410PI
IXBD4411PI
IXBD4410SI
IXBD4411SI
Description
Package
Temperature Range
Full-Feature Low-Side Driver 16-Pin P-DIP -40 to +85°C
Full-Feature High-Side Driver 16-Pin P-DIP -40 to +85°C
Full-Feature Low-Side Driver 16-Pin SO
Full-Feature High-Side Driver 16-Pin SO
-40 to +85°C
-40 to +85°C
IXBD4410
IXBD4411
The IXBD4410/IXBD4411 ISOSMART
chipset is designed to control the gates
of two Power MOSFETs or Power
IGBTs that are connected in a half-
bridge (phase-leg) configuration for
driving multiple-phase motors, or used
in applications that require half-bridge
power circuits. The IXBD4410/
IXBD4411 is a full-feature chipset
consisting of two 16-Pin DIP or SO
devices interfaced and isolated by two
small-signal ferrite pulse transformers.
The small-signal transformers provide
greater than 1200 V isolation.
Even with commutating noise ambients
greater than ±50 V/ns and up to 1200 V
potentials, this chipset establishes
error-free two-way communications
between the system ground-reference
IXBD4410 and the inverter output-
reference IXBD4411. They incorporate
uonvedrecruvrorletangt eorVdDeD soartuVrEaEtilooncksohuuttadnodwn
to protect the IGBT or Power MOSFET
devices from damage.
The chipset provides the necessary
gate drive signals to fully control the
grounded-source low-side power
device as well as the floating-source
high-side power device. Additionally,
the IXBD4410/4411 chipset provides a
negative-going, off-state gate drive
signal for improved turn-off of IGBTs or
Power MOSFETs and a system logic-
compatible status fault output FLT to
indicate overcurrent or desaturation,
and undervoltage VDD or VEE. During a
status fault, both chipset keep their
respective gate drive outputs off; at
VEE.
540 V-
Features
z 1200 V or greater low-to-high side
isolation.
z Drives Power Systems Operating on
up to 575 V AC mains
z dv/dt immunity of greater than
±50V/ns
z Proprietary low-to-high side level
translation and communication
z On-chip negative gate-drive supply
to ensure Power MOSFET or IGBT
turn-off and to prevent gate noise
interference
z 5 V logic compatible HCMOS inputs
with hysteresis
z Available in either the 16-Pin DIP or
the 16-Pin wide-body, small-outline
plastic package
z 20 ns switching time with 1000 pF
load; 100 ns switching time with
10,000 pF load
z 100 ns propagation delay time
z 2 A peak output drive capability
z Self shut-down of output in response
to over-current or short-circuit
z Under-voltage and over-voltage VDD
lockout protection
z Protection from cross conduction of
the half bridge
z Logic compatible fault indication
from both low and high-side driver
Applications
z 1- or 3-Phase Motor Controls
z Switch Mode Power Supplies
(SMPS)
z Uninterruptible Power Supplies
(UPS)
z Induction Heating and Welding
Systems
z Switching Amplifiers
z General Power Conversion Circuits
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1
1 page  
the IXBD4411 is strictly for status only.
Any gate-drive shutdown because of a
high-side fault is done locally within the
high-side IXBD4411. The IXBD4411
gate-drive will turn-off the power device
whenever an overcurrent or under
voltage condition arises. The overcurrent
sensing is active only while the gate
driver output is "high" (on). The
overcurrent fault condition is latched and
is reset on the next INH gate input
positive transition. The FLT (pin 8) of the
IXBD4411 is not used and should be
grounded.
The low-side IXBD4410 driver provides
an output pin 8 (FLT) to indicate a high-
side (IXBD4411) or a low-side
(IXBD4410) fault. This output pin is an
"open-drain" output. The IXBD4410 low-
side driver fault indications are similar to
the IXBD4411 high-side driver indications
as outlined above. A "graphic" logic
diagram of the chipset's FLT function is
presented in Fig.4. Note that this diagram
presents the logic of this function at the
"low-side" IXBD4410 driver and is not the
actual circuit. It describes the combined
logic of the "fault logic" and "hi-side fault
sense" blocks in both the IXBD4410 and
IXBD4411 as shown in Fig. 2 and 3.
The most efficient method of providing
power for the high-side driver is by
bootstrapping. This method is illustrated
in the functional drawing on page 4 and
in the application example (Fig. 6 and 9)
by diode D1 and capacitor C1. Using this
method, the power is drawn through a
high-voltage diode onto a reservoir
capacitor whenever the floating high-side
ground returns to near the real ground of
the low-side driver. When the high-side
gate is turned on and the floating ground
moves towards a higher potential, the
bootstrapping diode back-biases, and the
high-side driver draws its power solely
from the reservoir capacitor. Power may
also be provided via any isolated power
supply (usually an extra secondary on
the system housekeeping supply
switching transformer).
Both the IXBD4410 and IXBD4411
contain on-board negative charge pumps
to provide negative gate drive, which
ensures turn-off of the high- or low-side
power device in the presence of currents
induced by power device Miller capaci-
tance or from inductive ground transients.
These charge pumps provide -5 V
relative to the local driver ground when
© 2004 IXYS All rights reserved
IXBD4410
IXBD4411
VDD is at +15 V, and at rated average
currents of 25 mA. The charge pump
requires two external capacitors, C7 and
C11 in Fig. 6. The charge pump
frequency is nominally 600 kHz. The
charge pump clock is turned off
ewanxhcdeenVeeEdvEiensrgutpthhpeeliedbsifrfeeearxekcdneoceewdnb2e0ratwVtien, egtonoptfhrteehveVeDnDt
IC.
Both the IXBD4410 and IXBD4411
drivers possess two local grounds each,
a common logic ground, and "Kelvin"
ground. The Kelvin ground and logic
grounds are first connected directly to
each other, and then to the Kelvin-source
of the power device for accurate over-
current measurement in the presence of
inductive transients on the power device
source terminal.
Power MOSFET or IGBT overcurrent
sensing utilizes an on-chip comparator
with a typical 300 mV threshold. In a
typical application, the current mirror pin
of the Power MOSFET or IGBT is con-
nected to a grounded, low-value resistor,
and to the overcurrent comparator input
on the high- or low-side driver. The
comparator will respond typically within
150 ns to an overcurrent condition to
shutdown the driver output. The power
switches could be protected also by
desa-turation detection (see Fig. 6, 7 and
9).
To assure maximum protection for the
phase-leg power devices, the chipset
incorporates the following Power
MOSFET and IGBT protection circuits:
z Power device overcurrent or desa-
turation protection. The IXBD4410/
4411will turn off the driven device
within 150 ns of sensing an output
overcurrent or desaturation condition.
z Gate-drive lockout circuitry to prevent
cross conduction (simultaneous
conduction of the low- and high-side
phase-leg power devices), either
under normal operating conditions or
when a fault occurs.
z During power-up, the chipset's gate-
drive outputs will be low (off), until the
voltage reaches the under-voltage trip
point.
z Under-voltage gate-drive lockout on
the low- and/or high- side driver when-
ever the respective positive power
supply falls below 9.5 V typically.
z Under-voltage gate-drive lockout on
the low- and high- side driver
whenever the respective negative
power supply rises above -3 V
typically.
5
5 Page 
The nominal electrical specifications of
the transformer are as follows:
z Open circuit inductance
(100 kHz; 20 mV):
3 µH
z Interwinding capacitance:
2 pF
z Primary leakage inductance: 0.1 µH
z Turns ratio:
6:2
z Primary-to-secondary isolation
(1min):
1500 V~
z Core permeability (µi):
125
The recommended ferrite bead is Fair
Rite Products part number 2661000101,
which is manufactured by:
Fair-Rite Products Corp.
Wallkill, NY
Phone: (800) 836-0427
Web site: www.fair-rite.com
As seen in the application drawings
(Fig. 6, 9 and 12) a coupling capacitor
(22 nF) and a damping resistor (22 Ω)
are added in series with the primary
side of the transformer. The capacitor
will control the small amount of energy
needed to transfer the signal to the
companion driver. The resistor will
control the damping of the signal and
limit the peak transmitter output current.
The receiver is designed to operate
Fig. 11: Ferrite bead dimensions
over a wide common mode input range.
To reduce noise pickup, the receiver
has ±250 mV of input hysteresis.
If the signal is being distorted at the
transmitter, the transmitter is probably
running into current limit. A decrease in
the coupling capacitance or an increase
in the damping resistance should solve
this problem. The receiver operates
over a wide input range. The minimum
amplitude for one side of the receiver is
about 1 V and a maximum of about 3 V.
It is critical that there be no overshoot
on the transformer secondary wave-
form. Each signal should be slightly
overdamped. If significant overshoot
exists, the received signal may be
logically inverted. An increase of the
damping resistor will solve this problem.
IXBD4410
IXBD4411
Fig. 12: Transmitter/Receiver Waveforms
© 2004 IXYS All rights reserved
DS96528E(05/04)
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IXBD4411.PDF ] | |
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