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IXBD4410 반도체 회로 부품 판매점

(IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset



IXYS Corporation 로고
IXYS Corporation
IXBD4410 데이터시트, 핀배열, 회로
ISOSMARTTM Half Bridge Driver Chipset
Type
IXBD4410PI
IXBD4411PI
IXBD4410SI
IXBD4411SI
Description
Package
Temperature Range
Full-Feature Low-Side Driver 16-Pin P-DIP -40 to +85°C
Full-Feature High-Side Driver 16-Pin P-DIP -40 to +85°C
Full-Feature Low-Side Driver 16-Pin SO
Full-Feature High-Side Driver 16-Pin SO
-40 to +85°C
-40 to +85°C
IXBD4410
IXBD4411
The IXBD4410/IXBD4411 ISOSMART
chipset is designed to control the gates
of two Power MOSFETs or Power
IGBTs that are connected in a half-
bridge (phase-leg) configuration for
driving multiple-phase motors, or used
in applications that require half-bridge
power circuits. The IXBD4410/
IXBD4411 is a full-feature chipset
consisting of two 16-Pin DIP or SO
devices interfaced and isolated by two
small-signal ferrite pulse transformers.
The small-signal transformers provide
greater than 1200 V isolation.
Even with commutating noise ambients
greater than ±50 V/ns and up to 1200 V
potentials, this chipset establishes
error-free two-way communications
between the system ground-reference
IXBD4410 and the inverter output-
reference IXBD4411. They incorporate
uonvedrecruvrorletangt eorVdDeD soartuVrEaEtilooncksohuuttadnodwn
to protect the IGBT or Power MOSFET
devices from damage.
The chipset provides the necessary
gate drive signals to fully control the
grounded-source low-side power
device as well as the floating-source
high-side power device. Additionally,
the IXBD4410/4411 chipset provides a
negative-going, off-state gate drive
signal for improved turn-off of IGBTs or
Power MOSFETs and a system logic-
compatible status fault output FLT to
indicate overcurrent or desaturation,
and undervoltage VDD or VEE. During a
status fault, both chipset keep their
respective gate drive outputs off; at
VEE.
540 V-
Features
z 1200 V or greater low-to-high side
isolation.
z Drives Power Systems Operating on
up to 575 V AC mains
z dv/dt immunity of greater than
±50V/ns
z Proprietary low-to-high side level
translation and communication
z On-chip negative gate-drive supply
to ensure Power MOSFET or IGBT
turn-off and to prevent gate noise
interference
z 5 V logic compatible HCMOS inputs
with hysteresis
z Available in either the 16-Pin DIP or
the 16-Pin wide-body, small-outline
plastic package
z 20 ns switching time with 1000 pF
load; 100 ns switching time with
10,000 pF load
z 100 ns propagation delay time
z 2 A peak output drive capability
z Self shut-down of output in response
to over-current or short-circuit
z Under-voltage and over-voltage VDD
lockout protection
z Protection from cross conduction of
the half bridge
z Logic compatible fault indication
from both low and high-side driver
Applications
z 1- or 3-Phase Motor Controls
z Switch Mode Power Supplies
(SMPS)
z Uninterruptible Power Supplies
(UPS)
z Induction Heating and Welding
Systems
z Switching Amplifiers
z General Power Conversion Circuits
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1


IXBD4410 데이터시트, 핀배열, 회로
Symbol
VDD/VEE
Vin
IIion (rev)
PPDD
TTAJM
TTsLtg
RthJA
RthJC
Definition
Supply Voltage
Input Voltage (INH, INL)
Input Current (INL, INH, IM)
Peak Reverse Output Current (OUT)
Maximum Power Dissipation
TC = 25° C (16-Pin SOIC)
(TA = 25° C)
Operating Ambient Temperature
Maximum Junction Temperature
Storage Temperature Range
Lead Soldering Temperature for 10 s
(16-Pin SOIC)
IXBD4410
IXBD4411
Maximum Ratings
-0.5 ... 24
-0.5...VDD +0.5
±10
2
V
V
A
A
600 mW
10 W
-40 ... 85
150
-55 ... 150
300
°C
°C
°C
°C
Dimensions in inch (1" = 25.4 mm)
16-Pin SOIC
1.67 K/W
10 K/W
Die substrate
connected to tab
Recommended Operating Conditions
VDD/VEE
VLGDhD//LLGGl
Supply Voltage
Maximum Common Mode dv/dt
10 ... 20
V
10 ... 16.5 V
±50 V/ns
Symbol
Definition/Condition
Characteristic Values
(TA
=
25°C,
VDD
=
15
V, unless
min.
otherwise specified)
typ. max.
INL, INH Inputs (referred to LG)
Vt+ Positive-Going Threshold
Vt- Negative-Going Threshold
Vih Input Hysteresis
Iin Input Leakage Current/Vin=VDD or LG
Cin Input Capacitance
3.65
-1
1
10
V
1V
V
1 µA
pF
Open Drain Fault Output (referred to LG)
Voh
HI Output/Rpu = 10 kto VDD
VDD-0.05
V
Vol LO Output/Io = 4 mA
0.3 0.5 V
OUT Output (referred to LG)
Voh HI Output/Io = -5 mA
VDD-0.05
V
Vol LO Output/Io = 5 mA
VEE+0.05
V
Ro Output HI Res./Io = -0.1 A
3 5
Ro Output LO Res./Io = 0.1 A
3 4
Ipk
Peak Output Current/CL = 10 nF
1.5 2
A
IM Input (referred to KG)
Vt+ Positive-Going Threshold
0.24 0.3 0.45 V
Cin Input Capacitance
10 pF
Rs
Shorting Device Output Resistance
50
75 100
VEE Supply (referred to LG)
VEE Output Voltage/Io = 1 mA, Co = 1 µF
Iout Output Current/Vout = 0.70 • VEE
finv Inverting Frequency
VEEF Undervoltage Fault Indication
-5
-20
-3
-6.5 -7.5 V
-25 mA
600 kHz
-4.8 V
16-Pin Plastic DIP
End view
© 2004 IXYS All rights reserved




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IXBD4410 driver

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(IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset - IXYS Corporation



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(IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset - IXYS Corporation