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Toshiba Semiconductor |
RN1401,RN1402,RN1403,RN1404,RN1405,RN1406
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1401,RN1402,RN1403
RN1404,RN1405,RN1406
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2401~RN2406
Equivalent Circuit and Bias Resister Values
Type No.
RN1401
RN1402
RN1403
RN1404
RN1405
RN1406
R1 (kΩ
4.7
10
22
47
2.2
4.7
R2 (kΩ
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1401~1406
RN1401~1404
RN1405, 1406
RN1401~1406
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
50
50
10
5
100
200
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
Unit
V
V
V
mA
mW
°C
°C
1 2001-06-07
RN1401,RN1402,RN1403,RN1404,RN1405,RN1406
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off
current
RN1401~1406
RN1401
RN1402
Emitter cut-off current
RN1403
RN1404
RN1405
RN1406
RN1401
RN1402
DC current gain
RN1403
RN1404
RN1405
RN1406
Collector-emitter
saturation voltage
RN1401~1406
RN1401
RN1402
Input voltage (ON)
RN1403
RN1404
RN1405
RN1406
Input voltage (OFF)
Transition frequency
Collector Output
capacitance
RN1401~1404
RN1405, 1406
RN1401~1406
RN1401~1406
RN1401
RN1402
Input resistor
RN1403
RN1404
RN1405
RN1406
RN1401~1404
Resistor ratio
RN1405
RN1406
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
R1
R1/R2
Test
Circuit
Test Condition
― VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 10V, IC = 0
―
VEB = 5V, IC = 0
― VCE = 5V, IC = 10mA
― IC = 5mA, IB = 0.25mA
― VCE = 0.2V, IC = 5mA
― VCE = 5V, IC = 0.1mA
― VCE = 10V, IC = 5mA
―
VCB = 10V, IE = 0,
f = 1MHz
― ―
― ―
Min Typ. Max Unit
― ― 100
nA
― ― 500
0.82 ― 1.52
0.38 ― 0.71
0.17
0.082
―
―
0.33
mA
0.15
0.078 ― 0.145
0.074 ― 0.138
30 ― ―
50 ― ―
70 ― ―
―
80 ― ―
80 ― ―
80 ― ―
― 0.1 0.3 V
1.1 ―
2.0
1.2 ― 2.4
1.3 ― 3.0
V
1.5 ― 5.0
0.6 ― 1.1
0.7 ― 1.3
1.0 ― 1.5
V
0.5 ― 0.8
― 250 ― MHz
― 3
6 pF
3.29 4.7 6.11
7 10 13
15.4 22 28.6
32.9 47 61.1
1.54 2.2 2.86
3.29 4.7 6.11
0.9 1.0 1.1
0.0421 0.0468 0.0515
0.09 0.1 0.11
kΩ
―
2 2001-06-07
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