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PDF RF2705 Data sheet ( Hoja de datos )
| Número de pieza | RF2705 | |
| Descripción | LOW NOISE/ MULTI-MODE/ QUAD-BAND/ QUADRATURE MODULATOR AND PA DRIVER | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
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Typical Applications
• EDGE/GSM (GSM850/900) Handsets
• EDGE/GSM (DCS/PCS) Handsets
• W-CDMA Handsets/Data Cards
RF2705
LOW NOISE, MULTI-MODE, QUAD-BAND,
QUADRATURE MODULATOR AND PA DRIVER
• W-CDMA/GSM/EDGE Multimode Handsets
and Data Cards
Product Description
The RF2705 is a low noise, multi-mode, quad-band direct
I/Q to RF modulator and PA driver designed for handset
applications where multiple modes of operation are
required. Frequency doublers, dividers and LO buffers
are included to support a variety of LO generation
options. Dynamic power control is supported through a
single analog input giving 90dB of power control range for
the W-CDMA mode and 40dB of power control in the
other two modes. Three sets of RF outputs are provided:
high band and low band low noise EDGE/GMSK outputs,
as well as one wideband W-CDMA output. The device is
designed for 2.7V to 3.3V operation, and is assembled in
a plastic, 24-pin, 4mmx4mm QFN.
Optimum Technology Matching® Applied
Si BJT
GaAs HBT
GaAs MESFET
Si Bi-CMOS
InGaP/HBT
SiGe HBT
Si CMOS
9GaN HEMT
SiGe Bi-CMOS
24 23 22
VCC2 1
LO HB P 2
Note: The die flag is the
chip's main ground.
LO HB N 3
DIV +45°
2 -45°
LO LB P 4
Flo +45°
x2 -45°
LO LB N 5
Mode Control
and Biasing
MODE C 6
789
21 20 19
18
RF OUT
WB P
17
RF OUT
WB N
16
RF OUT
HB P
Σ
15
RF OUT
HB N
Power
Control
14
RF OUT
LB P
13
RF OUT
LB N
10 11 12
Functional Block Diagram
0.10 C
4.00
-A-
-B-
1.00
0.80
4.00
0.10 C
0.10 C
0.50 TYP
2.45
+0.10
-0.10
0.10 C
2.45
+0.10
-0.10
Shaded lead is pin 1.
Dimensions in mm.
0.10 C
-C-
SEATING
PLANE
Scale: None
0.08 C
0.05
0.00
0.30
0.18
TYP
0.10 M C A B
0.50
0.30
TYP
Package Style: QFN, 24-Pin, 4x4
Features
• W-CDMA High/Mid/Low Power Modes
• Quad-Band Direct Quadrature Modulator
• Variable Gain PA Drivers
• GMSK Bypass Amplifiers
• LO Frequency Doubler and Divider
• Baseband Filtering
Ordering Information
RF2705
Low Noise, Multi-Mode, Quad-Band, Quadrature
Modulator and PA Driver
RF2705PCBA-41XFully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 041026
5-113
1 page  
RF2705
Parameter
Specification
Min.
Typ.
Max.
Unit
Output Performance with CW Baseband Inputs
Wideband Mode
Mode=Wideband FLOx2 (see Control Logic Truth Table for Mode Control Settings)
VGA and PA Driver
Output Power W-CDMA Modu-
5
dBm
lated*
Output Power CW
2
5
8 dBm
Gain Control Voltage Range 0.2
2.0 V
Gain Control Range
92
dB
Gain Control Slope
Modulator
Sideband Suppression
*
*
*
Carrier Suppression
3rd Harmonic of Modulation
Suppression at FC-3x300kHz
Spurious Outputs
Spurious Output at Integer Multi-
ples of FLO LB*
FLO LB
4xFLO LB
6xFLO LB
Output Compression
Output P1dB*
Intermodulation
Output IP3*
73 dB/V
-48 -30 dBc
-50 -30 dBc
-50 -30 dBc
-50 -30 dBc
-42 -30 dBc
-41 -30 dBc
-38 -30 dBc
-23 -10 dBc
-55 -50 dBc
-60.0
-14.0
-47.0
+11.5
+20
dBm
0 dBm
0 dBm
dBm
dBm
Intermodulation IM3 tone at
-37 dBc
FC+70kHz and FC+130kHz
relative to tones at
FC+90kHz and FC+110kHz
-40 dBc
* Not tested in Production
** Provides the same output power as modulated signal with associated crest factor.
Condition
VCC=2.7V, T=+25°C, LO=975MHz to
990MHz at -10dBm, IQ=540mVP-P** at
100kHz, unless otherwise noted
GC=2.0V, IQ=0.8VP-P at HQPSK
GC = 2.0 V
Difference between output power at
GC=2.0V and GC=0.2V
Calculated between GC=1.0V and 0.5V
GC=2.0V, No I/Q adjustment
GC=1.5V, No I/Q adjustment
GC=1.0V, No I/Q adjustment
GC=0.5V, No I/Q adjustment
GC=2.0V, No I/Q adjustment
GC=1.5V, No I/Q adjustment
GC=1.0V, No I/Q adjustment
GC=0.5V, No I/Q adjustment
GC = 2.0 V
GC=2.0V, I/Q=540mVP-P at 100kHz
FLO LB leakage
Second harmonic of carrier
Third harmonic of carrier
I/Q = 100 kHz
GC=2.0V. Extrapolated from IM3 with two
baseband tones at 90kHz and 110kHz
applied differentially, in quadrature, at both I
and Q inputs, each tone 400mVP-P.
GC = 2.0 V
GC = 1.5 V
Rev A4 041026
5-117
5 Page 
RF2705
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
General Specifications
Operating Range
Supply Voltage 2.7
3.3 V
Temperature -40
+85 °C
Current Consumption
Refer to Logic Control Truth Table for Mode
Control Pin Voltages.
Sleep
<1 10 µA
Wideband FLOx1 (high power)
114
mA GC=2.0V
* 85
mA GC=0.2V
(medium power)
89
mA GC=2.0V
* 54
mA GC=0.2V
(low power)
63
mA GC=2.0V. See Note 1.
* 42
mA GC=0.2V. See Note 1.
Wideband FLOx2 (high power)
110
mA GC=2.0V
84 mA GC=0.2V
(medium power)
80
mA GC=2.0V
53 mA GC=0.2V
(low power)
54
mA GC=2.0V. See Note 1.
41 mA GC=0.2V. See Note 1.
High Band FLOx2
72
mA GC=2.0V
Low Band FLO/2
82
mA GC=2.0V
High Band Bypass
23
mA
Low Band Bypass
22
mA
High Band FLOx1
76
mA GC=2.0V
Low Band FLOx1
74
mA GC=2.0V
Logic Levels
Input Logic 0
Input Logic 1
Logic Pins Input Current
LO Input Ports
0 0.4 V
1.4
VCC
V
<1.0 µA CMOS inputs
LO LB Input Frequency Range
800
1000
MHz
LO HB Input Frequency Range
1600
2000
MHz
Input Impedance
50 Ω Externally matched
I/Q Baseband Inputs
Baseband Input Voltage
1.15
1.25 V Common mode voltage
Baseband Input Level
EDGE
1.2
VP-P
Differential
W-CDMA
0.8
VP-P
1DPCCH+1DPDCH. See Note 1.
GMSK
1.0
VP-P
Differential
Baseband Input Impedance
100 k||1 pF
Ω Measured at 100kHz
Input Bandwidth
EDGE 0.7
1.0
MHz
W-CDMA 8.0
11.0
MHz
Baseband Filter Attenuation
EDGE 20
dB At 20MHz
W-CDMA 10
dB At 40MHz
Baseband Input DC Current
-10
0
10 µA
Gain Control
Gain Control Voltage
0.2
2.2 V
Gain Control Impedance
10 kΩ
Note 1: In low power mode it is recommended that the IQ level be reduced to 0.4VP-P. If IQ level is >0.4VP-P, this mode should be used
for W-CDMA TX power levels below -20dBm (measured at antenna).
Rev A4 041026
5-123
11 Page | ||
| Páginas | Total 24 Páginas | |
| PDF Descargar | [ Datasheet RF2705.PDF ] | |
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