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Toshiba Semiconductor |
RN2201~RN2206
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2201,RN2202,RN2203
RN2204,RN2205,RN2206
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1201~RN1206
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN2201
RN2202
RN2203
RN2204
RN2205
RN2206
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2201~2206
RN2201~2204
RN2205, 2206
RN2201~2206
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
−50
−50
−10
−5
−100
300
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
Unit
V
V
V
mA
mW
°C
°C
―
―
2-4E1A
1 2001-06-07
RN2201~RN2206
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation frequency
Collector output
capacitance
Input resistor
Resistor ratio
RN2201~2206
RN2201
RN2202
RN2203
RN2204
RN2205
RN2206
RN2201
RN2202
RN2203
RN2204
RN2205
RN2206
RN2201~2206
RN2201
RN2202
RN2203
RN2204
RN2205
RN2206
RN2201~2204
RN2205, 2206
RN2201~2206
RN2201~2206
RN2201
RN2202
RN2203
RN2204
RN2205
RN2206
RN2201~2204
RN2205
RN2206
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
R1
R1/R2
Test
Circuit
Test Condition
― VCB = −50V, IE = 0
― VCE = −50V, IB = 0
―
―
VEB = −10V, IC = 0
―
―
―
VEB = −5V, IC = 0
―
―
―
― VCE = −5V,
― IC = −10mA
―
―
―
IC = −5mA,
IB = −0.25mA
―
―
― VCE = −0.2V,
― IC = −5mA
―
―
― VCE = −5V,
― IC = −0.1mA
― VCE = −10V, IC = −5mA
―
VCB = −10V, IE = 0,
f = 1MHz
―
―
―
―
―
―
―
―
――
―
Min Typ. Max Unit
― ― −100
nA
― ― −500
−0.82 ― −1.52
−0.38 ― −0.71
−0.17
−0.082
―
―
−0.33
−0.15
mA
−0.078 ― −0.145
−0.074 ― −0.138
30 ― ―
50 ― ―
70 ― ―
―
80 ― ―
80 ― ―
80 ― ―
― −0.1 −0.3
V
−1.1 ― −2.0
−1.2 ― −2.4
−1.3 ― −3.0
−1.5 ― −5.0
V
−0.6 ― −1.1
−0.7 ― −1.3
−1.0 ― −1.5
−0.5 ― −0.8
V
― 200 ― MHz
―3
6 pF
3.29 4.7 6.11
7 10 13
15.4 22 28.6
32.9 47 61.1
1.54 2.2 2.86
3.29 4.7 6.11
0.9 1.0 1.1
0.0421 0.0468 0.0515
0.09 0.1 0.11
kΩ
―
2 2001-06-07
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