파트넘버.co.kr RN2108F 데이터시트 PDF


RN2108F 반도체 회로 부품 판매점

Switching/ Inverter Circuit/ Interface Circuit and Driver Circuit Applications



Toshiba Semiconductor 로고
Toshiba Semiconductor
RN2108F 데이터시트, 핀배열, 회로
RN2107F~RN2109F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2107F,RN2108F,RN2109F
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit in mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1107F~RN1109F
Equivalent Circuit and Bias Resister Values
Type No.
RN2107F
RN2108F
RN2109F
R1 (k)
10
22
47
R2 (k)
47
47
22
Maximum Ratings (Ta = 25°C)
JEDEC
EIAJ
TOSHIBA
Weight: 2.3 mg
2-2HA1A
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
RN2107F
VCBO
50
V
~RN2109F
VCEO
50
V
RN2107F
6
Emitter-base voltage
RN2108F
VEBO
7
V
RN2109F
15
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
IC
100
mA
RN2107F
~RN2109F
PC
Tj
100 mW
150 °C
Tstg
55~150
°C
000707EAA1
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
· The information contained herein is subject to change without notice.
2001-02-08 1/5


RN2108F 데이터시트, 핀배열, 회로
RN2107F~RN2109F
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off
current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector Output
capacitance
Input resistor
Resistor ratio
RN2107F
~RN2109F
RN2107F
RN2108F
RN2109F
RN2107F
RN2108F
RN2109F
RN2107F
~RN2109F
RN2107F
RN2108F
RN2109F
RN2107F
RN2108F
RN2109F
RN2107F
~RN2109F
RN2107F
~RN2109F
RN2107F
RN2108F
RN2109F
RN2107F
RN2108F
RN2109F
Symbol
ICBO
ICEO
IEBO
Test
Circuit
Test Condition
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VEB = 7V, IC = 0
VEB = 15V, IC = 0
hFE
VCE = 5V,
IC = 10mA
VCE (sat)
IC = 5mA,
IB = 0.25mA
VI (ON)
VICC=E
= 0.2V,
5mA
VI (OFF)
fT
Cob
R1
VICC=E
= 5V,
0.1mA
VICC=E
= 10V,
5mA
Vf =CB1M= Hz10V, IE = 0,
――
R1/R2
Min Typ. Max Unit
― ― −100 nA
― ― −500 nA
0.081
0.15
0.078 ― −0.145 mA
0.167 ― −0.311
80 ― ―
80 ― ― ―
70 ― ―
― −0.1 0.3 V
0.7 ― −1.8
1.0
2.6
V
2.2 ― −5.8
0.5 ― −1.0
0.6
― −1.16
V
1.5 ― −2.6
200 MHz
7
15.4
32.9
0.191
0.421
1.92
3
10
22
47
0.213
0.468
2.14
6
13
28.6
61.1
0.232
0.515
2.35
pF
k
2001-02-08 2/5




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RN2108F driver

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RN2108F

Switching/ Inverter Circuit/ Interface Circuit and Driver Circuit Applications - Toshiba Semiconductor