파트넘버.co.kr RN1708JE 데이터시트 PDF


RN1708JE 반도체 회로 부품 판매점

Switching/ Inverter Circuit/ Interface Circuit and Driver Circuit Applications.



Toshiba Semiconductor 로고
Toshiba Semiconductor
RN1708JE 데이터시트, 핀배열, 회로
RN1707JE~RN1709JE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1707JE,RN1708JE,RN1709JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
Unit: mm
· Two devices are incorporated into an Extreme-Super-Mini (5 pin)
package.
· Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
· Wide range of resistor values are available to use in various circuit
designs.
· Complementary to RN2707JE~2709JE
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN1707JE
RN1708JE
RN1709JE
R1 (kW)
10
22
47
R2 (kW)
47
47
22
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1707JE~
1709JE
RN1707JE
Emitter-base voltage
RN1708JE
RN1709JE
Collector current
Collector power dissipation RN1707JE~
Junction temperature
1709JE
Storage temperature range
Note: Total rating
Symbol
Rating
VCBO
VCEO
50
50
6
VEBO
7
15
IC 100
PC (Note) 100
Tj 150
Tstg -55~150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: g (typ.)
Equivalent Circuit
(top view)
54
Q1 Q2
123
1 2002-01-29


RN1708JE 데이터시트, 핀배열, 회로
RN1707JE~RN1709JE
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output
capacitance
Input resistor
Resistor ratio
RN1707JE~1709JE
RN1707JE
RN1708JE
RN1709JE
RN1707JE
RN1708JE
RN1709JE
RN1707JE~1709JE
RN1707JE
RN1708JE
RN1709JE
RN1707JE
RN1708JE
RN1709JE
RN1707JE~1709JE
RN1707JE~1709JE
RN1707JE
RN1708JE
RN1709JE
RN1707JE
RN1708JE
RN1709JE
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
R1
R1/R2
Test Condition
Min Typ. Max Unit
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
VEB = 7 V, IC = 0
VEB = 15 V, IC = 0
VCE = 5 V, IC = 10 mA
IC = 5 mA,
IB = 0.25 mA
VCE = 0.2 V, IC = 5 mA
VCE = 5 V, IC = 0.1 mA
VCE = 10 V, IC = 5 mA
VCB = 10 V, IE = 0,
f = 1 MHz
¾
¾
¾
¾
0.081
0.078
0.167
80
80
70
¾
0.7
1.0
2.2
0.5
0.6
1.5
¾
¾
7
15.4
32.9
0.191
0.421
1.92
¾
¾
¾
¾
¾
¾
¾
¾
0.1
¾
¾
¾
¾
¾
¾
250
3
10
22
47
0.213
0.468
2.14
100
500
0.15
0.145
0.311
¾
¾
¾
0.3
1.8
2.6
5.8
1
1.16
2.6
¾
6
13
28.6
61.1
0.232
0.515
2.35
nA
mA
V
V
V
MHz
pF
kW
2 2002-01-29




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RN1708JE driver

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RN1708JE

Switching/ Inverter Circuit/ Interface Circuit and Driver Circuit Applications. - Toshiba Semiconductor