파트넘버.co.kr RN1109 데이터시트 PDF


RN1109 반도체 회로 부품 판매점

Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications



Toshiba Semiconductor 로고
Toshiba Semiconductor
RN1109 데이터시트, 핀배열, 회로
RN1107~1109
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1107,RN1108,RN1109
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2107~2109
Equivalent Circuit and Bias Resistor Values
Type No. R1 (k)
RN1107
RN1108
RN1109
10
22
47
R2 (k)
47
47
22
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1107~1109
RN1107~1109
RN1107
RN1108
RN1109
RN1107~1109
RN1107~1109
RN1107~1109
RN1107~1109
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Rating
50
50
6
7
15
100
100
150
55~150
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
Unit
V
V
V
mA
mW
°C
°C
2-2H1A
1 2001-06-07


RN1109 데이터시트, 핀배열, 회로
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation frequency
Collector output
capacitance
Input Resistor
Resistor Ratio
RN1107~1109
RN1107
RN1108
RN1109
RN1107
RN1108
RN1109
RN1107~1109
RN1107
RN1108
RN1109
RN1107
RN1108
RN1109
RN1107~1109
RN1107~1109
RN1107
RN1108
RN1109
RN1107
RN1108
RN1109
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
R1
R1/R2
Test
Circuit
Test Condition
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VEB = 7V, IC = 0
VEB = 15V, IC = 0
VCE = 5V, IC = 10mA
IC = 5mA, IB = 0.25mA
VCE = 0.2V, IC = 5mA
VCE = 5V, IC = 0.1mA
VCE =10V, IC = 5mA
VCB = 10V, IE = 0,
f = 1MHz
RN1107~1109
Min Typ. Max Unit
― ― 100 nA
― ― 500 nA
0.081 0.15
0.078 0.145 mA
0.167 0.311
80 ― ―
80 ― ―
70 ― ―
0.1 0.3 V
0.7 1.8
1.0 2.6 V
2.2 5.8
0.5 1.0
0.6 1.16 V
1.5 2.6
250 MHz
3
6 pF
7
15.4
32.9
0.191
0.421
1.92
10
22
47
0.213
0.468
2.14
13
28.6
61.1
0.232
0.515
2.35
k
2 2001-06-07




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제조업체: Toshiba Semiconductor

( toshiba )

RN1109 driver

데이터시트 다운로드
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[ RN1109.PDF ]

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