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Toshiba Semiconductor |
RN1107~1109
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1107,RN1108,RN1109
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2107~2109
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN1107
RN1108
RN1109
10
22
47
R2 (kΩ)
47
47
22
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1107~1109
RN1107~1109
RN1107
RN1108
RN1109
RN1107~1109
RN1107~1109
RN1107~1109
RN1107~1109
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Rating
50
50
6
7
15
100
100
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
Unit
V
V
V
mA
mW
°C
°C
―
―
2-2H1A
1 2001-06-07
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation frequency
Collector output
capacitance
Input Resistor
Resistor Ratio
RN1107~1109
RN1107
RN1108
RN1109
RN1107
RN1108
RN1109
RN1107~1109
RN1107
RN1108
RN1109
RN1107
RN1108
RN1109
RN1107~1109
RN1107~1109
RN1107
RN1108
RN1109
RN1107
RN1108
RN1109
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
R1
R1/R2
Test
Circuit
Test Condition
― VCB = 50V, IE = 0
― VCE = 50V, IB = 0
― VEB = 6V, IC = 0
― VEB = 7V, IC = 0
― VEB = 15V, IC = 0
―
― VCE = 5V, IC = 10mA
―
― IC = 5mA, IB = 0.25mA
―
― VCE = 0.2V, IC = 5mA
―
―
― VCE = 5V, IC = 0.1mA
―
― VCE =10V, IC = 5mA
―
VCB = 10V, IE = 0,
f = 1MHz
―
――
―
―
――
―
RN1107~1109
Min Typ. Max Unit
― ― 100 nA
― ― 500 nA
0.081 ― 0.15
0.078 ― 0.145 mA
0.167 ― 0.311
80 ― ―
80 ― ― ―
70 ― ―
― 0.1 0.3 V
0.7 ― 1.8
1.0 ― 2.6 V
2.2 ― 5.8
0.5 ― 1.0
0.6 ― 1.16 V
1.5 ― 2.6
― 250 ― MHz
―3
6 pF
7
15.4
32.9
0.191
0.421
1.92
10
22
47
0.213
0.468
2.14
13
28.6
61.1
0.232
0.515
2.35
kΩ
―
2 2001-06-07
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