|
NXP Semiconductors |
INTEGRATED CIRCUITS
DATA SHEET
74AHC541; 74AHCT541
Octal buffer/line driver; 3-state
Product specification
Supersedes data of 1998 Sep 21
File under Integrated Circuits, IC06
1999 Nov 24
Philips Semiconductors
Octal buffer/line driver; 3-state
Product specification
74AHC541; 74AHCT541
FEATURES
• ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V
• Balanced propagation delays
• All inputs have a Schmitt-trigger action
• Inputs accepts voltages higher than VCC
• For AHC only: operates with CMOS input levels
• For AHCT only: operates with TTL input levels
• Specified from −40 to +85 °C and −40 to +125 °C.
DESCRIPTION
The 74AHC/AHCT541 is a high-speed Si-gate CMOS
device.
The 74AHC/AHCT541 are octal non-inverting buffer/line
drivers with 3-state bus compatible outputs.
The 3-state outputs are controlled by the output enable
inputs OE0 and OE1.
A HIGH on OEn causes the outputs to assume a
high-impedance OFF-state.
QUICK REFERENCE DATA
Ground = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
SYMBOL
PARAMETER
CONDITIONS
tPHL/tPLH
CI
CO
CPD
propagation delay An to Yn
input capacitance
output capacitance
power dissipation capacitance
CL = 15 pF; VCC = 5 V
VI = VCC or GND
CL = 50 pF; f = 1 MHz;
notes 1 and 2
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
∑ (CL × VCC2 × fo) = sum of outputs;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
2. The condition is VI = GND to VCC.
TYPICAL
AHC
3.5
3
4.0
10
AHCT
3.5
3
4.0
12
UNIT
ns
pF
pF
pF
1999 Nov 24
2
|