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PDF BD65494MUV Data sheet ( Hoja de datos )
| Número de pieza | BD65494MUV | |
| Descripción | Single H-Bridge Driver | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Datasheet
H-Bridge Drivers for DC Brush Motors
Single H-Bridge Driver
High-Speed Switching Type
BD65494MUV
General Description
The BD65494MUV provides a single H-bridge motor
driver which features wide range of motor power supply
voltage from 2.0V to 9.0V and low power consumption to
switch low ON-Resistance DMOS transistors at high
speed. This small surface mounting package is most
suitable for mobile system, home appliance and various
applications.
Features
Low ON-Resistance Power DMOS Output
Charge Pump-Less with PDMOS High-Side Driver
Drive Mode Switch Function
Under Voltage Locked Out protection
& Thermal Shut Down Function
Applications
Mobile System
Home Appliance
Amusement System, etc
Key Specifications
Power Supply Voltage Range:
2.5V to 3.6V
Motor Power Supply Voltage Range: 2.0V to 9.0V
Circuit Current (Open Mode):
360μA(Typ)
Stand-By Current:
1μA(Max)
Control Input Voltage Range:
0V to VCCV
Logic Input Frequency:
200kHz(Max)
Minimum Logic Input Pulse Width:
0.5μs(Min)
Turn On Time:
200ns(Typ)
Turn Off Time:
60ns(Typ)
H-Bridge Output Current (DC):
-1.0A to +1.0A
H-Bridge Output Current (Peak): -2.5A to +2.5A
Output ON-Resistance (Total):
0.55Ω(Typ)
Operating Temperature Range: -30°C to +85°C
Package
VQFN016V3030
W(Typ) x D(Typ) x H(Max)
3.00mm x 3.00mm x 1.00mm
Typical Application Circuit
Bypass Filter Capacitor for
Power Supply
Power-Saving
H: Active
L: Stand-by
PS 13
1µF to 100µF
VCC
9
Power Save TSD & UVLO
BandGap
Motor Control Input
Selective Drive Mode
H : EN/IN
L : IN/IN
INA 15
INB 8
PWM 14
Logic
Level Shift
&
Pre Driver
10 12
N.C. N.C.
Keep Open
11
GND
H-Bridge
Full ON
VQFN016V3030
Bypass Filter Capacitor for
Power Supply
1µF to 100µF
67
VM
OUTA
45
1 16
OUTB
23
PGND
〇Product structure : Silicon monolithic integrated circuit
.www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
〇This product has no designed protection against radioactive rays
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TSZ02201-0H3H0B600310-1-2
10.Feb.2016 Rev.002
1 page  
BD65494MUV
Typical Performance Curves (Reference data)
5
Top 85°C
4
Mid 25°C
Low -30°C
3
2
Operating range
(2.5V to 3.6V)
1
0
0
12 3 4
Power Supply Voltage : VCC [V]
Figure 1.
Circuit Current vs Supply Voltage
(Stand-by Mode)
Datasheet
1.5
Top 85°C
Mid 25°C
Low -30°C
1.0
0.5
Operating range
(2.5V to 3.6V)
0.0
0
1234
Power Supply Voltage : VCC [V]
Figure 2.
Circuit Current vs Supply Voltage
(Open Mode)
350
300
Top 85°C
Mid 25°C
Low -30°C
250
200
150
100
50
0
0
250 500 750
Output Current : IOUT [mA]
1000
Figure 3.
Output VDS vs Output Current
(Output On-Resistance on high-side, VM=5V, VCC=3V)
350
300
Top 85°C
Mid 25°C
Low -30°C
250
200
150
100
50
0
0
250 500 750
Output Current : IOUT [mA]
1000
Figure 4.
Output VDS vs Output Current
(Output On-Resistance on low-side, VM=5V, VCC=3V)
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
5/14
TSZ02201-0H3H0B600310-1-2
10.Feb.2016 Rev.002
5 Page 
BD65494MUV
Datasheet
Operational Notes – continued
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Figure 9.
Example of monolithic IC structure
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe
Operation (ASO).
15. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
11/14
TSZ02201-0H3H0B600310-1-2
10.Feb.2016 Rev.002
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet BD65494MUV.PDF ] | |
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