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PDF BD65491FV Data sheet ( Hoja de datos )
| Número de pieza | BD65491FV | |
| Descripción | Single H-Bridge Driver | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Datasheet
H-Bridge Drivers for DC Brush Motors
Single H-Bridge Driver
High-Speed Switching Type
BD65491FV
General Description
The BD65491FV provides a single H-bridge motor driver
which features wide range of motor power supply
voltage from 1.8V to 16.0V and low power consumption
to switch low ON-Resistance DMOS transistors at high
speed. This small surface mounting package is most
suitable for mobile system, home appliance and various
applications.
Features
Low ON-Resistance Power DMOS Output
Charge Pump-Less with PDMOS High-Side Driver
Selective Switching Speed: 4 Modes
Drive Mode Switch Function
Control Input Voltage Range Fit 1.8V Controller
Under Voltage Locked Out Protection
& Thermal Shut Down Function
Key Specifications
Power Supply Voltage Range:
2.5V to 5.5V
Motor Power Supply Voltage Range: 1.8V to 16.0V
Circuit Current (Open Mode):
0.80mA(Typ)
Stand-By Current:
1μA (Max)
Control Input Voltage Range:
0V to VCCV
Logic Input Frequency:
500kHz(Max)
Minimum Logic Input Pulse Width:
0.2μs(Min)
Turn On Time (TR1=TR2=Low):
150ns(Typ)
Turn Off Time (TR1=TR2=Low):
50ns(Typ)
H-Bridge Output Current (DC):
-1.2A to +1.2A
H-Bridge Output Current (Peak2): -4.0A to +4.0A
Output ON-Resistance (Total):
0.35Ω(Typ)
Operating Temperature Range: -30°C to +85°C
Package
SSOP-B16
W(Typ) x D(Typ) x H(Max)
5.00mm x 6.40mm x 1.35mm
Applications
Mobile System
Home Appliance
Amusement System, etc
Typical Application Circuit
Bypass Filter Capacitor for
Power Supply
Power-Saving
H: Active
L: Stand-by
PS 13
Selectable Switching Speed
Motor Control Input
Selective Drive Mode
H : EN/IN
L : IN/IN
TR1 4
TR2 14
INA 1
INB 2
PWM 3
1µF to 100µF
VCC
15
Power Save TSD & UVLO
BandGap
Logic
Level Shift
&
Pre Driver
H-Bridge
Full ON
16
GND
SSOP-B16
Bypass Filter Capacitor for
Power Supply
1µF to 100µF
5 12
VM
OUTA
10 11
67
OUTB
89
PGND
○Product structure：Silicon monolithic integrated circuit
www.rohm.com
© 2012ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product has no designed protection against radioactive rays
1/14
TSZ02201-0H3H0B300430-1-2
09.Dec.2015 Rev.002
1 page  
BD65491FV
Typical Performance Curves (Reference Data)
5.0
Top 85°C
Mid 25°C
Low -30°C
4.0
3.0
Operating range
(2.5V to 5.5V)
2.0
1.0
0.0
0
12 34 56
Power Supply Voltage : VCC [V]
Figure 1.
Circuit Current vs Power Supply Voltage
(Stand-by Mode)
7
3.0
Top 85°C
Mid 25°C
Low -30°C
2.0
Operating range
(2.5V to 5.5V)
1.0
0.0
0
1 2 34 5 6
Power Supply Voltage : VCC [V]
Figure 2.
Circuit Current vs Power Supply Voltage
(Open Mode)
7
300
250
200
150
100
50
0
0
Top 85°C
Mid 25°C
Low -30°C
200 400 600 800 1000 1200
Output Current : IOUT [mA]
Figure 3.
Output VDS vs Output Current
(Output On-Resistance on high-side, VM=5V, VCC=3V）
300
250
200
150
100
50
0
0
Top 85°C
Mid 25°C
Low -30°C
200 400 600 800 1000 1200
Output Current : IOUT [mA]
Figure 4.
Output VDS vs Output Current
（Output On-Resistance on low-side, VM=5V, VCC=3V)
www.rohm.com
© 2012ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/14
TSZ02201-0H3H0B300430-1-2
09.Dec.2015 Rev.002
5 Page 
BD65491FV
Operational Notes – continued
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Resistor
Transistor (NPN)
Pin A
Pin A
Pin B
C
B
E
Pin B
P+
NN
Parasitic
Elements
P P+
NN
P Substrate
GND
Parasitic
Elements
N P+
N P N P+ N
P Substrate
Parasitic
GND
Elements
Figure 9.
Example of monolithic IC structure
GND
B
N Region
close-by
C
E
Parasitic
Elements
GND
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe
Operation (ASO).
15. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
11/14
TSZ02201-0H3H0B300430-1-2
09.Dec.2015 Rev.002
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet BD65491FV.PDF ] | |
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