파트넘버.co.kr BAV21 데이터시트 PDF


BAV21 반도체 회로 부품 판매점

High Voltage Switching Diode



Taiwan Semiconductor 로고
Taiwan Semiconductor
BAV21 데이터시트, 핀배열, 회로
Small Signal Product
BAV19 / BAV20 / BAV21
Taiwan Semiconductor
High Voltage Switching Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Through-hole device type mounting
- Hermetically sealed glasss
- Solder hot dip tin (Sn) lead finish
- All external surfaces are corrosion resistant and
leads are readily solderable
- Packing code with suffix "G" means
Halogen free
MECHANICAL DATA
- Case: DO-35 package
- High temperature soldering guaranteed: 260oC/10s
- Polarity: Indicated by black cathode band
- Weight: 109 ± 4 mg
DO-35
Hermetically Sealed Glass
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Peak Forward Surge
Current
Pulse Width = 1 s , Square Wave
Pulse Width = 1 μs , Square Wave
PD
IFSM
500
1
4
Average Forward Current
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
IO
RθJA
TJ , TSTG
200
300
-65 to +200
PARAMETER
BAV19
Reverse Breakdown Voltage
BAV20
IR = 100 μA
BAV21
Forward Voltage
Reverse Leakage Current
Junction Capacitance
IF = 100 mA
IF = 200 mA
BAV19
VR = 100 V
BAV20
VR = 150 V
BAV21
VR = 200 V
VR = 0 , f = 1.0 MHz
Reverse Recovery Time
(Note 1)
Note 1: Test condition : IF= IR= 30mA , RL=100, IRR=3mA
SYMBOL
V(BR)
VF
IR
CJ
trr
MIN
120
200
250
-
-
-
-
-
MAX
-
-
-
1.00
1.25
100
5
50
UNIT
mW
A
mA
oC/W
oC
UNIT
V
V
nA
pF
ns
Document Number: DS_S1412015
Version: D14


BAV21 데이터시트, 핀배열, 회로
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
Fig. 1 Reverse Voltage VS. Reverse Current
325
TA=25oC
300
275
1
10
Reverse Current (uA)
100
Fig. 3 Reverse CFuigrr.e3nt VS. Reverse Voltage
100
90 TA=25oC
80
70
60
50
40
30
20
100
1000
Reverse Voltage (V)
BAV19 / BAV20 / BAV21
Taiwan Semiconductor
Fig. 2 Reverse Current VS. Reverse Voltage
50
TA=25oC
40
30
20
10
0
10
100
Reverse Voltage (V)
1000
Fig. 4 Forward FViogl.ta4ge VS. Forward Current
475
TA=25oC
425
375
325
275
225
1
10
Forward Current (uA)
100
Fig. 5 Forward VFoigla. t5age VS. Forward Current
700 TA=25oC
650
600
550
500
450
0.1
1
Forward Current (mA)
10
Document Number: DS_S1412015
Fig. 6 Forward VFoigla. t6age VS. Forward Current
1.4
1.3 TA=25oC
1.2
1.1
1
0.9
0.8
0.7
10
100
Forward Current (mA)
1000
Version: D14




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: Taiwan Semiconductor

( taiwan )

BAV21 diode

데이터시트 다운로드
:

[ BAV21.PDF ]

[ BAV21 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BAV20

General purpose diodes - NXP Semiconductors



BAV20

FAST SWITCHING DIODE - Diodes Incorporated



BAV20

General Purpose Diodes - Fairchild Semiconductor



BAV20

High Voltage General Purpose Diode - Fairchild Semiconductor



BAV20

Small Signal Diodes - General Semiconductor



BAV20

Silicon Epitaxial Planar Diodes - Vishay Telefunken



BAV20

Silicon-Planar-Diodes - Diotec Semiconductor



BAV20

(BAVxx) SMALL SIGNAL SWITCHING DIODE - Galaxy Semi-Conductor



BAV20

(BAV19 - BAV21) Small-Signal Diode - GOOD-ARK