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Número de pieza | BAV103 | |
Descripción | Small Signal Diodes | |
Fabricantes | MCC | |
Logotipo | ||
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omponents
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Features
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
• Moisture Sensitivity Level 1
• Silicon Epitaxial Planar Diodes
• These diodes are also available in other case styles including: the DO-35 case
with the type designations BAV19 to BAV21, the SOD-123 case with the type
designations BAV19W to BAV21W, the SOT-23 case with the type designations
BAS19 to BAS21, and the SOD-323 case with type designations BAV19WS to
BAV21WS.
Maximum Ratings
Continuous Reverse
Voltage
BAV100
BAV101
BAV102
BAV103
Repetitive Peak Reverse
Voltage
BAV100
BAV101
BAV102
BAV103
Forward DC Current
VR
VRRM
IF
50V
100V
150V
200V
60V
120V
200V
250V
250mA
TA=25OC
TA=25OC
TA=25OC(1)
Rectified Current (Average)
Half Wave Rectification
with Resist. Load
I(FAV)
200mA
f>50Hz,
TA=25OC
Repetitive Peak Forward
Current
IFRM
625mA
f>50Hz, TA=25OC(1)
Surge Forward Current
Power Dissipation
IFSM
PTOT
1.0A
400mW
T<1s, Tj =25OC
TA=25OC
Thermal Resistance
Junction to Ambient Air(2)
TA
375OC/W
Operating and Stora ge
temperature Range
TS, TSTG
-55 to +150OC
Note: (1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics @ 25°C Unless Otherwise Specified
Maximum Forward Voltage
IF = 100mA
IF= 200mA
Maximum Leakage current
BAV100
BAV100
BAV101
BAV101
BAV102
BAV102
BAV103
BAV103
Typital Capacitance
VF
IR
CTOT
1.00V
1.25V
100nA
15uA
100nA
15uA
100nA
15uA
100nA
15uA
1.5pF
TA=25OC
VR=50V
VR=50V, Tj=100OC
VR=100V
VR=100V, Tj=100OC
VR=150V
VR=150V, Tj=100OC
VR=200V
VR=200V, Tj=100OC
VR=0V, f =1.0MHz
Maximum Reverse recovery
time
Typical Dynamic Forward
Resistance
trr
RF
50ns
5.0 OHM
IF=30mA, IR=30mA
Irr=3.0mA,
RL=100 OHM
IF=10mA
Notes:1. Lead in Glass Exemption Applied, see EU Directive Annex 5.
2. Valid provided that electrodes are kept at ambient temperature
BAV100
THRU
BAV103
Small Signal Diodes
MINIMELF(SOD-80C)
Cathode Mark
C
B
A
DIMENSION
DIM INCHES
MM NOTE
MIN MAX MIN MAX
A .130 .146 3.30 3.70
B .008 .016 0.20 0.40
C .055 .059 1.40 1.50
SUGGESTED SOLDER
PAD LAYOUT
0.105
0.075”
0.030”
Revision: A
www.mccsemi.com
1 of 4
2011/01/01
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet BAV103.PDF ] |
Número de pieza | Descripción | Fabricantes |
BAV10 | High-speed diode | NXP Semiconductors |
BAV100 | General purpose diodes | NXP Semiconductors |
BAV100 | Silicon Epitaxial Planar Diodes | Vishay Telefunken |
BAV100 | Small Signal Diodes | General Semiconductor |
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