|
Fairchild Semiconductor |
BAT54/A/C/S
Schottky Diodes
February 2005
3
2
1
SOT-23
3
L4P
12
MARKING
BAT54 = L4P BAT54A = L42
BAT54C = L43 BAT54S = L44
Connection Diagram
BAT54
3
BAT54A
3
1 2NC
BAT54C 3
12
3 BAT54S
12
12
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
VRRM
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD
RθJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
VR Breakdown Voltage
VF Forward Voltage
IR Reverse Leakage
CT Total Capacitance
trr Reverse Recovery Time
IR = 10µA
IF = 0.1mA
IF = 1mA
IF = 10mA
IF = 30mA
IF = 100mA
VR = 25V
VR = 1V, f = 1.0MHz
IF = IR = 10mA, IRR = 1.0mA,
RL = 100Ω
Value
30
200
600
-55 to +150
-55 to +150
Value
290
430
Min.
30
Unit
V
mA
mA
°C
°C
Unit
mW
°C/W
Max.
240
320
400
500
0.8
2
10
5.0
Units
V
mV
mV
mV
mV
V
µA
pF
ns
©2005 Fairchild Semiconductor Corporation
BAT54/A/C/S Rev. E1
1
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Forward Voltage vs Temperature
Figure 2. Reverse Leakage Current
vs Temperature
10-1
10-2
10-3 -25oC
10-4 25oC
75oC
10-5 100oC
1100-03
125oC
10--14
100oC
10-25 75oC
10--36
10--47
-25oC
10-6
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
10--58
0
5 10 15 20
VF-Forward Voltage [V]
VR-Reverse Voltage [V]
Figure 3. Capacitance vs Reverse Bias Voltage
25
30
16
14
12
10
8
6
4
2
0 1 2 3 4 5 6 7 8 9 10
VR-Reverse Voltage [V]
BAT54/A/C/S Rev. E1
2
www.fairchildsemi.com
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