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BAT54C 반도체 회로 부품 판매점

230mW SMD Schottky Barrier Diode



Taiwan Semiconductor 로고
Taiwan Semiconductor
BAT54C 데이터시트, 핀배열, 회로
Small Signal Product
230mW SMD Schottky Barrier Diode
FEATURES
- Fast switching speed
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
SOT-23
- Case: Bend lead SOT-23 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 8 ± 0.5 mg
- Marking Code: KL1,KL2,KL3,KL4
BAT54 / A / C / S
Taiwan Semiconductor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak Pepetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward current (tp1S;δ0.5)
Forward Surge Current
@ t<1.0s
Power Dissipation
VRRM
VRWM
VR
IF
IFRM
IFSM
Pd
30
200
300
600
200
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature
RθJA
Tj , TSTG
500
-55 to 125
UNIT
V
mA
mA
mA
mW
°C/W
°C
PARAMETER
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
IR=100µA
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25V
VR=1V, f=1.0MHz
IF=IR=10mA, RL=100, IRR=1mA
SYMBOL
V(BR)
VF
IR
CT
trr
MIN
30
--
--
--
--
--
--
--
--
MAX
--
0.24
0.32
0.40
0.50
1.00
2.0
10
5
UNIT
V
V
V
V
V
V
µA
pF
ns
Document Number: DS_S1404001
Version: E14


BAT54C 데이터시트, 핀배열, 회로
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
1000
Fig. 1 Typical Forward Characteristics
100
10
125oC
25oC
-40oC
1
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF, Instantaneous Forward Voltage (V)
1.6
Fig. 3 Admissible Power Dissipation Curve
250
200
150
100
50
0
0 25 50 75 100 125 150
Ambient Temperature (°C)
BAT54 / A / C / S
Taiwan Semiconductor
1000
100
10
1
0.1
0.01
0
Fig. 2 Typical Reverse Characteristics
125oC
75oC
25oC
5 10 15 20 25
Reverse Voltage (V)
30
14
12
10
8
6
4
2
0
0
Fig. 4 Typical Junction Capacitance
4 8 12 16 20 24 28
Reverse Voltage (V)
Document Number: DS_S1404001
Version: E14




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BAT54C diode

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