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PDF BAS85 Data sheet ( Hoja de datos )
| Número de pieza | BAS85 | |
| Descripción | SCHOTTKY DIODES | |
| Fabricantes | RECTRON | |
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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SCHOTTKY DIODES
BAS85
FEATURES
* Fast Switching Device(TRR<4.0nS)
* Mini MELF Glass Case (SOD-80)
* Through-Hole Device Type Mounting
* Hermetically Sealed Glass
* Compression Bonded Construction
* All external surfaces are corrosion resistant and leads
are readily solderable
SOD-80
.016(0.40)
.008(0.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
Maximum Forward Comtinuous Reverse Voltage
Maximum Forward Comtinuous Current @ TA=25OC
Maximum Peak Forward Current @ TA=25OC
Surge Forward Current @ tp<1s,TA=25OC
Maximum Power Dissipation @ TA=65OC
VR
IF
IFM
IFSM
PD
Junction Temperature
Storage Temperature Range
TJ
TSTG
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Reverse breakdown voltage (IR=10µA)
V(BR)R
Reverse voltage leakage current (VR=25V)
IR
(IF=0.1mA)
(IF=1mA)
Forward voltage Pulse Tesx tp<300µs,δ<2% (IF=10mA)
(IF=30mA)
(IF=100mA)
Diode capacitance (VR=1,f=1MHz)
Reveres recovery time (IF=IR=10mA,IR=1mA)
VF
CD
trr
.142(3.6)
.134(3.4)
Dimensions in inches and (millimeters)
MIN.
30
-
-
-
-
BAS85
30
200
300
600
200
125
-65 to + 150
TYP.
-
-
-
-
-
0.5
-
-
-
MAX.
-
2
0.24
0.32
0.4
-
0.8
10
5
UNITS
V
mAmps
mAmps
mAmps
mW
OC
OC
UNITS
V
µA
V
pF
nS
2006-3
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BAS85.PDF ] | |
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