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MCC |
MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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Features
• Moisture Sensitivity Level 1
• This diode features low turn-on voltage
• The devices are protected by a PN junction guard ring against
excessive voltage, such as electrostatic discharges
• This diode is also available in a DO-35 case with type designation
BAT85
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Maximum Ratings
Symbol
VR
IF
IFM
IFSM
Ptot
RJA
TJ
TSTG
Rating
Continuous Reverse Voltage
Forward DC Current at Tamb=25℃
Repetitive Peak Forward Current Tamb=25℃
Surge Forward Current at tp<1s, Tamb=25℃
Power Dissipation at Tamb=65℃
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature
Rating
30
200(2)
300(2)
600(2)
200(2)
430(2)
125
-55 to +150
Unit
V
mA
mA
mA
mW
℃/W
℃
℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
V(BR)R
Reverse Breakdown Voltage
(IR=10µAdc Pulsed)
30 --- --- V
Forward Voltage
IF=0.1mA, Pulse test tp<300μs
VF
IF=1.0mA, Pulse test tp<300μs
IF=10mA, Pulse test tp<300μs
IF=30mA, Pulse test tp<300μs
--- --- 0.24
--- --- 0.32
--- --- 0.40 V
--- 0.5 ---
--- --- 0.80
IF=100mA, Pulse test tp<300μs
IR
Leakage Current (3)
(VR=25Vdc)
--- 0.2 2.0 µA
Ctot
Capacitance
(VR=1.0V, f=1.0MHz)
--- --- 10 pF
trr
Reverse Recovery Time
(IF=10mA, IR=10mA, Irr=1.0mA)
---
---
5.0 ns
Notes:1. Lead in Glass Exemption Applied, see EU Directive Annex 5.
2. Valid provided that electrodes are kept at ambient temperature
BAS85
200mW
Small Signal Schottky
Barrier Diodes
30 Volts
MINIMELF
Cathode Mark
C
B
A
DIMENSIONS
INCHES
DIM MIN
MAX
A .130 .146
B .008 .016
C .055 .059
MM
MIN
3.30
.20
1.40
MAX
3.70
.40
1.50
NOTE
∅
SUGGESTED SOLDER
PAD LAYOUT
0.105
0.075”
0.030”
Revision: A
www.mccsemi.com
1 of 3
2011/01/01
BAS85
200
180 VR = 30 V
160
140
120 RthJA = 540 K/W
PR - Limit
100 @ 100% VR
80
60 PR - Limit
40 @ 80% VR
20
0
25 50 75 100 125
15822
Tj - Junction Temperature ( ° C )
150
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
1000
100
10
1
Tj = 150 ° C
Tj = 25 ° C
0.1
0
15824
0.5 1.0
VF - Forward Voltage ( V )
1.5
Figure 3. Forward Current vs. Forward Voltage
MCC
TM
Micro Commercial Components
1000
VR = V RRM
100
10
1
25
15823
50 75 100 125 150
Tj - Junction Temperature ( ° C )
Figure 2. Reverse Current vs. Junction Temperature
10
9
8
7
6
5
4
3
2
1
0
0.1
15825
f = 1 MHz
1 10
VR - Reverse Voltage ( V )
100
Figure 4. Diode Capacitance vs. Reverse Voltage
Revision: A
www.mccsemi.com
2 of 3
2011/01/01
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