파트넘버.co.kr BAS70-06 데이터시트 PDF


BAS70-06 반도체 회로 부품 판매점

Surface Mount Schottky Barrier Diode



LGE 로고
LGE
BAS70-06 데이터시트, 핀배열, 회로
Features
Low turn-on voltage
Fast switching
PN junction guard Ring for transient
Mechanical Data
Case: SOT-23, Molded plastic
Weight: 0.008 grams
BAS70/-04/05/06
200mW Surface Mount Schottky Barrier Diode
SOT-23
0.020(0.51)
0.015(0.37)
0.055(1.40) 0.098(2.50)
0.047(1.19) 0.083(2.10)
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
0.120(3.05)
0.104(2.65)
0.041(1.05)
0.047(0.89)
0.043(1.10)
0.035(0.89)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
0.007(0.178)
0.003(0.076)
Dimensions in inches and (millimeters)
BAS70 Marking: 73
BAS70-04 Marking: 74
BAS70-05 Marking: 75
BAS70-06 Marking: 76
Maximum Ratings TA=25 oC unless otherwise specified
Type Number
Symbol
BAS70
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
70
V
RMS Reverse Voltage
VR(RMS)
49
V
Forward Continuous Current (Note 1)
IF 70 mA
Non-Repetitive Peak Forward Surge Current
@ t 1.0s
IFSM
100 mA
Power Dissipation (Note 1)
Pd 200 mW
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Electrical Characteristics
RθJA
TJ
TSTG
625
-55 to + 125
-65 to + 150
K/W
oC
oC
Type Number
Symbol
Min
Max Units
Reverse Breakdown Voltage (Note 2), IR=10uA
Reverse Leakage Current tp<300us, VR=50V
V(BR)
IR
70
_
100 nA
Forward Voltage Drop
tp=300us, IF=1.0mA
tp<300us, IF=15mA
Junction Capacitance VR=0, f=1.0MHz
Reverse Recovery Time (Note 3)
VF
Cj
trr
_
_
_
410
1000
2.0
5.0
mV
pF
nS
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Test Period < 3000uS.
3. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=1.0mA, RL=100.
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BAS70-06 데이터시트, 핀배열, 회로
BAS70/-04/05/06
200mW Surface Mount Schottky Barrier Diode
RATINGS AND CHARACTERISTIC CURVES (BAS70 / -04 / -05 / -06)
FIG.1- POWER DERATING CURVE
200
FIG.2- MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT PER LEG
100 8.3ms Single Half Sine Wave
(JEDEC Method)
50
100
0
0
25 50
75 100 125
TA, AMBIENT TEMPERATURE ( C)
FIG.3- TYPICAL FORWARD CHARACTERISTICS
100
TA= 1250C
TA= 750C
10 TA= 250C
1
TA= 00C
TA= -400C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF, INSTANTANEOUS FORWARD VOLTAGE. (V)
1.6
FIG.5- TYPICAL TOTAL CAPACITANCE VS
REVERSE VOLTAGE
f = 1.0MHz
2.0
1.0
0
12
5 10 20
50 100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
10000
TA= 1250C
1000
100
TA= 750C
TA= 250C
10
TA= 00C
1 TA= -400C
0.1
0 10 20 30 40 50
VR, REVERSE VOLTAGE. (V)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
100
60
70
10
1
00
0.1
5 10 15 20
0.01 0.1 1 10 100
REVERSE VOLTAGE
PULSE DURATION. (sec)
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BAS70-06 diode

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