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BAS316WS 반도체 회로 부품 판매점

200mW High-Speed Switching SMD Diode



Taiwan Semiconductor 로고
Taiwan Semiconductor
BAS316WS 데이터시트, 핀배열, 회로
Small Signal Product
BAS316WS
Taiwan Semiconductor
200mW High-Speed Switching SMD Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: Flat lead SOD-323F small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 4.6 ± 0.5 mg
- Marking Code: W2
SOD-323F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Average Forward Current
Non-Repetitive Peak Forward Surge Current Pulse Width = 1 μs
Pulse Width = 1 ms
PD
IO
IFRM
200
250
4.0
1.0
Operating Junction Temperature
TJ 150
Storage Temperature Range
TSTG
-65 to + 150
PARAMETER
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Voltage
Junction Capacitance
Reverse Recovery Time
IR = 100 μA
IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 75 V
VR = 25 V
VR = 0 , f = 1.0 MHz
IF = IR = 10 mA , Irr = 0.1 × IR
SYMBOL
V(BR)
VF
IR
CJ
trr
MIN
100
-
-
-
-
-
-
-
MAX
-
0.715
0.855
1.000
1.250
1
0.03
1.5
4.0
UNIT
mW
mA
A
oC
oC
UNIT
V
V
μA
pF
ns
Document Number: DS_S1501001
Version: B15


BAS316WS 데이터시트, 핀배열, 회로
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
Fig. 1 Typical Forward Characteristics
300
275
250
225
200
175
150
125
100
75
50
25
0
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
BAS316WS
Taiwan Semiconductor
Fig. 2 Reverse Current As A Function of
Junction Temperature
100
10
max
VR=75V
VR=75V
VR=25V
1
0.1
0.01
0
typ
typ
20 40 60 80 100 120 140 160 180 200
Junction Temperature (oC)
Fig. 3 Admissible Power Dissipation Curve
250
200
150
100
50
0
0 25 50 75 100 125 150 175
Ambient Temperature (°C)
Fig. 4 Typical Junction Capacitance
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10 12 14 16
Reverse Voltage (V)
Document Number: DS_S1501001
Version: B15




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BAS316WS diode

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