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BAS116 반도체 회로 부품 판매점

Three Terminals SMD Low Leakage Switching Diode



TAITRON 로고
TAITRON
BAS116 데이터시트, 핀배열, 회로
Three Terminals SMD Low
Leakage Switching Diode
BAS116/BAW156/BAV170/BAV199
Three Terminals SMD Low Leakage Switching Diode
Features
Surface mount package ideally suited for automatic insertion
Very low leakage current
Low capacitance
RoHS Compliant
Mechanical Data
Case:
Terminals:
Weight:
SOT-23, Plastic Package
Solderable per MIL-STD-202G, Method 208
Approx. 0.008 gram
SOT-23
Maximum Ratings* (T Ambient=25ºC unless noted otherwise)
Symbol
Description
Pinout Figure
BAS116
1
BAW156
5
BAV170
4
Marking Code
PA P4 P3
VR
VRRM
IF(AV)
IFSM
PD
RthJA
TJ,
TSTG
Reverse Voltage
Peak Reverse Voltage
Average Rectified Continuous
Forward Current
Non-Repetitive Peak Forward Surge
Current at t=1µS
Power Dissipation FR-5 Board
Thermal Resistance, Junction to
Ambient
Operating Junction and Storage
Temperature Range
75
100
0.2
2.0
250
500
-55 to +150
BAV199
3
PB
Unit Conditions
V
V
A
A
mW Note 1
° C/W Note 1
°C
Note: 1: FR-5=1.0X0.75X0.062”
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. B/CH
Page 1 of 4


BAS116 데이터시트, 핀배열, 회로
Three Terminals SMD Low Leakage Switching Diode
BAS116/BAW156/BAV170/BAV199
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Description
VR Reverse Breakdown Voltage
VF Forward Voltage
IR Reverse Current
CT Total Capacitance
Trr Reverse Recovery Time
Min.
75
-
-
-
-
Typ.
-
-
0.002
8.0
-
-
Max.
-
0.9
1.0
1.1
1.25
5
80
2.0
3.0
Unit Conditions
V IR=100μA
IF=1.0mA
IF=10mA
V
IF=50mA
IF=150mA
VR=75V
nA
VR=75V, TJ=150° C
pF VR=0V, f=1MHz
µS
IF=IR=10mA,
RL=100
Typical Characteristics Curves
Fig.1- Instantaneous Forward Characteristics
Fig.2- Reverse Characteristics
Instantaneous Forward Voltage (V)
www.taitroncomponents.com
Junction Temperature (° C)
Rev. B/CH
Page 2 of 4




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