BAW156W 반도체 회로 부품 판매점
LOW LEAKAGE SWITCHING DIODES
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 Pan Jit International |
DATA SHEET
BAS116W/BAW156W/BAV170W/BAV199W
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
VOLTAGE 100 Volts
POWER 200mWatts
SOT-323
FEATURES
• Suface mount package ideally suited for automatic insertion.
• Very low leakage current. 2pA typical at VR=75V.
• Low capacitance. 4pF max at VR=0V, f=1MHz
• In compliance with EU RoHS 2002/95/EC directives
.087(2.2)
.070(1.8)
.054(1.35)
.045(1.15)
MECHANICAL DATA
• Case: SOT-323 plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx weight: 0.0052 gram
• Marking: BAS116W :PA,BAW156W :P4,BAV170W :P3,BAV199W :PB
.056(1.40)
.047(1.20)
.004(.10)MAX.
Unit: inch (mm)
.006(.15)
.002(.05)
.016(.40)
.008(.20)
ABSOLUTE RATINGS (each diode)
R e ve rse V o lta g e
PA R A M E TE R
P e a k R e ve rse V o lta g e
C o ntinuo us F o rw a rd C urre nt
N o n-re p e titive P e a k F o rw a rd S urg e C urre nt a t t= 1 .0 us
S ym b o l
VR
V RM
IF
I FS M
V a lue
75
100
0 .2
4 .0
U nits
V
V
A
A
THERMAL CHARACTERISTICS
PA R A M E TE R
P o w e r D issip a tio n (N o te 1 )
T he rm a l R e sista nce , Junctio n to A m b ie nt (N o te 1 )
Junctio n Te m p e ra ture
S to ra g e Te m p e ra ture
S ym b o l
P TO T
R θJA
TJ
TS TG
V a lue
200
625
-5 5 to 1 5 0
-5 5 to 1 5 0
U nits
mW
O C /W
OC
OC
NOTE:
1. FR-4 Board = 70 x 60 x 1mm.
SINGLE
3
COMMON ANODE
3
COMMON CATHODE
3
SERIES
3
12
BAS116W
12
BAW156W
12
BAV170W
12
BAV199W
REV.0.0-DEC.19.2008
PAGE . 1
ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted)
PA R A M E TE R
R e ve rse B re a kd o w n V o lta g e
R e ve rse C urre nt
F o rw a rd V o lta g e
To ta l C a p a cita nce
R e ve rse R e co ve ry Tim e
S ym b o l
Te st C o nd itio n
V (B R )
IR
VF
CT
IR = 1 0 0 uA
V R=75 V
V R = 7 5 V ,T J= 1 5 0 O C
IF = 1 m A
IF = 1 0 m A
IF = 5 0 m A
IF = 1 5 0 m A
V R = 0 V , f= 1 M H Z
T R R IF = IR = 1 0 m A , R L= 1 0 0 Ω
M IN .
75
TYP.
0 .0 0 2
8 .0
M AX.
5
80
0 .9
1 .0
1 .1
1 .2 5
2 .0
3 .0
U nits
V
nA
V
pF
us
CHARACTERISTIC CURVES (each diode)
10
1.0
0.1 VR=75V
0.01
0.001
0
50 100 150 200
Tj, Junction Temperature (Deg C)
Fig. 1-Reverse Leakage vs. Junction Temperature
1000
100
TA=-25OC
10
1.0 TA=75OC
0.1
0.2
TA=125OC
TA=25OC
0.4 0.6 0.8 1.0
VF, Forward Voltage (V)
1.2
Fig. 2-Forward Current vs. Forward Voltage
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
20 40 60 80 100
V R, Reverse Voltage ( V)
Fig. 3- Total capacitance vs. Reverse Voltage
REV.0.0-DEC.19.2008
PAGE . 2
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BAW156W diode
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