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BAW101 반도체 회로 부품 판매점

High Voltage Double Diode



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BAW101 데이터시트, 핀배열, 회로
BAW101
High Voltage Double Diode
FEATURES
z High Switching Speed:Max.50ns.
z High Continuous Reverse Voltage:300V.
z Electrically Insulated Diodes.
Pb
Lead-free
APPLICATIONS
z General application.
ORDERING INFORMATION
Type No.
Marking
BAW101
AB
SOT-143
Package Code
SOT-143
MAXIMUM RATING @ Ta=25unless otherwise specified
Characteristic
Symbol
Limits
Repetitive Peak Reverse Voltage
Series connection VRRM
300
600
Continuous Reverse Voltage
Series connection VR
300
600
Continuous Forward Current
single diodes(note1)
double diodes(note1)
IF
250
140
Unit
V
V
mA
Repetitive Peak Forward Current
Non-repetitive Peak Forward Current
t=1μs
IFRM
IFSM
625
4.5
mA
A
Power Dissipation(note1)
Pd 350
mW
Junction Temperature
Tj
-65 to +150
Storage Temperature
TSTG
150
Operating Ambient Temperature
Tamb
-65
Note:1Device mounted on an FR4 Printed-circuit board,cathode-lead mountiong pad=1cm2.
Http:www.luguang.cn E-mail:[email protected]


BAW101 데이터시트, 핀배열, 회로
BAW101
High Voltage Double Diode
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Characteristic
Symbol Min Typ MAX UNIT Test Condition
Reverse Breakdown Voltage V(BR)R
300 -
-
V IR= 100μA
Forward Voltage
VF - - 1.1 V IF=100mANote1
Reverse Leakage Current
IR
-
-
150 nA VR=250V
50 μA VR=250V,Tj=150
Diodes Capacitance
Cd
--2
pF VR=0V,f=1.0MHz
Reverse Recovery Time
trr
- - 50 ns IF=IR=30mA,RL=100
Irr=0.1*IR
Note:1.Pulse tese:pulse width=300µs;δ=0.02
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Http:www.luguang.cn E-mail:[email protected]




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BAW101 diode

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