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BAV5004LP 반도체 회로 부품 판매점

HIGH VOLTAGE SWITCHING DIODE



Diodes 로고
Diodes
BAV5004LP 데이터시트, 핀배열, 회로
Features
Fast Switching Speed: 50ns Maximum
400V High Reverse Breakdown Voltage Rating
Low Capacitance: 2.5pF Maximum
Surface Mount Package Ideally Suited for Automated Insertion
Lead Free by Design/RoHS Compliant (Note 1)
Halogen and Antimony Free "Green" Device (Notes 2 & 3)
Qualified to AEC-Q101 Standards for High Reliability
BAV5004LP
HIGH VOLTAGE SWITCHING DIODE
Mechanical Data
Case: X1-DFN1006-2
Case Material: Molded Plastic, “Green” Molding Compound.
(Note 2) UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
X1-DFN1006-2
2
Bottom View
1
Device Schematic
Ordering Information (Note 4)
Notes:
Part Number
BAV5004LP-7B
Case
X1-DFN1006-2
Packaging
10,000/Tape & Reel
1. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
LY = Product Type Marking Code
Line Denotes Cathode Side
BAV5004LP
Document number: DS32181 Rev. 5 - 2
1 of 4
www.diodes.com
April 2012
© Diodes Incorporated


BAV5004LP 데이터시트, 핀배열, 회로
BAV5004LP
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 5)
Peak Repetitive Forward Current (Note 5)
Non-Repetitive Peak Forward Surge Current
@ t = 1.0μs
@ t = 1.0ms
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IFRM
IFSM
Value
400
350
247
300
625
5.0
3.0
Unit
V
V
V
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5) (See figure 1)
Thermal Resistance Junction to Ambient Air (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
350
357
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 6)
Forward Voltage
Reverse Current (Note 6)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VF
IR
CT
trr
Min Typ Max Unit
Test Condition
400 ⎯ ⎯ V IR = 150μA
0.93
IF = 20mA
⎯ ⎯ 1.09 V IF = 100mA
1.29
IF = 200mA
1 μA VR = 240V
100 μA VR = 240V, TJ = 150°C
0.9 2.5 pF VR = 0V, f = 1.0MHz
50
ns IF = IR = 30mA,
Irr = 3.0mA, RL = 100Ω
Notes:
5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
500
400
300
200
100
0
0 30 60 90 120 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
1,000
100
10
1
0.1
0.01
TJ = 150° C
TJ = 125°C
TJ = 85°C
TJ = 25°C
TJ = -55°C
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
BAV5004LP
Document number: DS32181 Rev. 5 - 2
2 of 4
www.diodes.com
April 2012
© Diodes Incorporated




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BAV5004LP

HIGH VOLTAGE SWITCHING DIODE - Diodes