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BAS116LT1 반도체 회로 부품 판매점

DIODE



WEJ 로고
WEJ
BAS116LT1 데이터시트, 핀배열, 회로
RoHS
BAS116LT1
SURFACE MOUNT SWITCHING DIODE
• Low Leakage Current Applications
• Medium Speed Switching Times
Package:SOT-23
DABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
TNon-Repetitive Peak Reverse
Voltage
VRM
100
.,LPeak Repetitive Reverse Voltage
working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75
OPeak Forward Current
IF 200
Forward
CCurrent(Note)
Continuous
IFM
300
Power Dissipation
Derate Above 25
(Note)
PD
300
2.4
ICJunction Temperature
Tj 150
Storage Temperature
Tstg -50-150
NNote:Diode Ceramic Substrate 10mm 8.0mm 0.7mm
Unit
V
V
mAdc
mAdc
mW
mW/
OELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Max Unit Test Conditions
TRForward Voltage
0.9 V IF=1.0mA
1.0 V IF=10mA
VF 1.1 V IF=50mA
1.25 V IF=150mA
CReverse Breakdown Voltage
V (BR) 75 — Vdc I BR = 100 uAdc
EReverse Voltage Leakage Current
LCapacitance
5.0
IR
80
Cj 2.0
EReverse Recovery Time
Trr 3.0
Note:Diode On Ceramic Substrate 10mm 8.0mm 0.7mm
JDEVICE MARKING:
WEBAS116LT1=JV
uA VR=75V
nA VR=75V Tj=150
PF VR=0 f=1.0MHz
uS IF=10mA to IR=10mA
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]




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BAS116LT1 diode

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