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RoHS
1SS184 SWITCHING DIODE
SOT-23 Plastic-Encapsulate DIODE
DFeatures
TPower dissipation
PD : 150 mW (Tamb=25oC)
.,LForward Current
IF : 100 mA
Reverse Voltage
VR : 80V
OOperating and storage junction temperature range
Tj, Tstg : -55 oC to +150 oC
1
1.
2.4
1.3
SOT-23
3
2
ONIC CMarking:B3
Unit:mm
TRELECTRICAL CHARACTERISTICS
o
C(Ta=25 C unless otherwise specified)
Parameter
Symbol
EReverse breakdown voltage
V(BR)
LReverse Voltage leakage current
IR
EForward Voltage
JDiode Capacitance
WEReverse Recovery Time
VF
Ctot
trr
Test Condition
IR=100 A
VR=80V
IF=100mA
VR=0V f=1MHz
IF=IR=10mA
Irr=0.1IR
MIN. MAX. Unit
80 V
0.5 A
1.2 V
3 pF
4 nS
RoHS
1SS184
Typical Characteristics TDIF - VF
.,L1
100m
O10m
C1m
TA=100 C
25 C
-25 C
100
NIC10 0
0.2 0.4 0.6 0.8 1.0
FORWARD VOLTAGE VF(V)
1.2
10
TA=100 C
1 75 C
100n
50 C
25 C
IR - VR
10n
1n
0 20 40 60 80
REVERSE VOLTAGE VR(V)
TRO2.0
Cf=1MHz
Ta=25 C
1.5
CT - VR
E1.2
L0.8
E0.4
J0
0.1 0.3 1 3 10 30 100 300
WE REVERSE VOLTAGE VR (V)
50
Ta=25 C
30 Fig.1
trr - IF
10
5
3
1
0.5
0.1
0.3 1 3
10 30
FORWARD CURRENT IF(mA)
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