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WEJ |
RoHS
RB425D
SOT-23-3L
RB425D Schottky barrier Diodes
FEATURES
z Small surface mounting type
z Low reverse current and low forward voltage
z High reliability
Marking: D3L
ICMaximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter
NPeak reverse voltage
ODC reverse voltage
Mean rectifying current
RPeak forward surge current
TJunction temperature
CStorage temperature
Symbol
VRM
VR
IO
IFSM
Tj
Tstg
Limits
40
40
100
1
125
-40~+125
ELEElectrical Ratings @TA=25℃
JParameter
WEForward voltage
Symbol Min. Typ. Max. Unit
VF1 0.55 V
VF2 0.34 V
-
D+
+
T2. 80¡ À0. 05
CO.,L1.60¡À0.05
Unit
V
V
mA
A
℃
℃
Conditions
IF=100mA
IF=10mA
Reverse current
IR
30 µA
VR=10V
Capacitance between terminals
CT
6 pF VR=10V, f=1MHZ
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