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1SS133M 반도체 회로 부품 판매점

Hermetically Sealed Glass Switching Diodes



Taiwan Semiconductor 로고
Taiwan Semiconductor
1SS133M 데이터시트, 핀배열, 회로
Small Signal Product
1SS133M
Taiwan Semiconductor
300mW, Hermetically Sealed Glass Switching Diodes
FEATURES
- Fast switching device (trr < 4.0 ns)
- Through-hole mount device type
- DO-34 package (JEDEC DO-204)
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion resistant
and leads are readily solderable
- RoHS compliant
- Solder hot dip Tin (Sn) lead finish
- Cathode indicated by polarity band
- Marking code: 133
DO-34
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 300
Working Inverse Voltage
WIV 90
Average Rectified Current
IO 150
Non-Repetitive Peak Forward Current
Peak Forward Surge Current
IFM
IFSURGE
450
2
Operating Junction Temperature
TJ + 175
Storage Temperature Range
TSTG
-65 to +200
UNIT
mW
V
mA
mA
A
oC
oC
PARAMETER
SYMBOL
Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
IR=500nA
IF=100mA
VR=80V
VR=0, f=1.0MHz
BV
VF
IR
Cj
Reverse Recovery Time
(Note 1)
trr
Notes: 1. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100, IRR=1mA
MIN
80
--
--
MAX
--
1.2
500
4.0
4.0
UNIT
V
V
nA
pF
ns
Document Number: DS_S1403003
Version: C15


1SS133M 데이터시트, 핀배열, 회로
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
Fig. 1 Forward Characteristics
100
10
TA=125oC
TA=75oC
1 TA=25oC
TA=-25oC
0.1
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Forward Voltage : VF (V)
Fig. 3 Capacitance Between Terminals Characteristics
3.0
f = 1 MHz
2.5
2.0
1.5
1.0
0.5
0.0
0
5 10 15 20 25 30
Reverse Voltage : VR (V)
Fig. 5 Surge Current Characteristics
100
1SS133M
Taiwan Semiconductor
10000
1000
100
10
Fig. 2 Reverse Characteristics
TA=100oC
TA=75oC
TA=50oC
TA=25oC
1
0
20 40 60 80 100 120
Reverse Voltage : VR (V)
Fig. 4 Reverse Recovery Time Characteristics
5
VR = 6 V
Irr = 1/10 IR
4
3
2
1
0
0
4 8 12 16
Forward Current : IF (mA)
20
Fig. 6 Reverse Recovery Time ( trr )
Measurement Circuit
10
1
0.1
1
10
100
1000
10000
Pulse Width : Tw (ms)
Document Number: DS_S1403003
Version: C15




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1SS133M diode

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