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BAV116WS 반도체 회로 부품 판매점

SURFACE MOUNT LOW LEAKAGE DIODE



Diodes 로고
Diodes
BAV116WS 데이터시트, 핀배열, 회로
Features
Fast Switching Speed
Ultra Low Leakage Current (5nA @ VR = 75V)
Low Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
BAV116WS
SURFACE MOUNT LOW LEAKAGE DIODE
Mechanical Data
Case: SOD323
Case Material: Molded Plastic, "Green" Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: Cathode Bar
Terminals: Finish Matte Tin Finish Annealed over Alloy 42
Leadframe; Solderable per MIL-STD-202, Method 208
Weight: 0.004 grams (Approximate)
SOD323
Top View
Ordering Information (Note 4)
Product
BAV116WS-7
Compliance
Standard
Marking
TW
Reel Size (inches)
7
Tape Width (mm)
8
Quantity per Reel
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOD323
TW
TW = Product Type Marking Code
Bar Denotes Cathode Side
BAV116WS
Document number: DS35981 Rev. 3 - 2
1 of 5
www.diodes.com
March 2015
© Diodes Incorporated


BAV116WS 데이터시트, 핀배열, 회로
BAV116WS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 5)
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0ms
@ t = 1.0s
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IFRM
IFSM
Value
85
60
215
500
4.0
1.0
0.5
Unit
V
V
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance Junction to Ambient Air (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
Value
200
625
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 6)
Forward Voltage
Leakage Current (Note 6)
Total Capacitance
Reverse Recovery Time
Symbol Min Typ Max Unit
Test Condition
V(BR)R
85
V IR = 100µA
0.9 IF = 1.0mA
VF
1.0
1.1
V IF = 10mA
IF = 50mA
1.25
IF = 150mA
IR
5.0
80
nA VR = 75V
nA VR = 75V, TJ = +150°C
CT 1.5 pF VR = 0, f = 1.0MHz
trr
3.0
µs
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100
Notes:
5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
BAV116WS
Document number: DS35981 Rev. 3 - 2
2 of 5
www.diodes.com
March 2015
© Diodes Incorporated




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