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BAT46
Vishay Semiconductors
Small Signal Schottky Diode
MECHANICAL DATA
Case: DO-35
Weight: approx. 125 mg
Cathode band color: Black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
• For general purpose applications
• This diode features very low turn-on voltage and
fast switching. This device is protected by a PN
junction guard ring against excessive voltage,
such as electrostatic discharges
• This diode is also available in the SOD-123 case
with type designation BAT46W-V and in the
MiniMELF case with type designations LL46
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
BAT46
ORDERING CODE
BAT46-TR or BAT46-TAP
INTERNAL CONSTRUCTION
Single diode
TYPE MARKING
BAT46
REMARKS
Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Repetitive peak reverse voltage
Forward continuous current (1)
Repetitive peak forward current (1)
Surge forward current (1)
Power dissipation (1)
tp < 1 s, < 0.5
tp < 10 ms
Tamb = 80 °C
VRRM
IF
IFRM
IFSM
Ptot
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
100
150
350
750
150
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air
Valid provided that electrodes are
kept at ambient temperature
RthJA
Junction temperature
Ambient operating temperature range
Storage temperature range
Tj
Tamb
Tstg
VALUE
300
125
- 65 to + 125
- 65 to + 150
UNIT
V
mA
mA
mA
mW
UNIT
K/W
°C
°C
°C
Rev. 1.8, 06-May-13
1 Document Number: 85662
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
BAT46
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Reverse breakdown voltage
Leakage current (1)
Forward voltage (1)
Diode capacitance
Note
(1) Pulse test; tp 300 μs, , < 2 %
IR = 100 μA (pulsed)
VR = 1.5 V
VR = 1.5 V, Tj = 60 °C
VR = 10 V
VR = 10 V, Tj = 60 °C
VR = 50 V
VR = 50 V, Tj = 60 °C
VR = 75 V
VR = 75 V, Tj = 60 °C
IF = 0.1 mA
IF = 10 mA
IF = 250 mA
VR = 0 V, f = 1 MHz
VR = 1 V, f = 1 MHz
V(BR)
IR
IR
IR
IR
IR
IR
IR
IR
VF
VF
VF
CD
CD
100
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TYP.
10
6
MAX.
0.5
5
0.8
7.5
2
15
5
20
250
450
1000
UNIT
V
μA
μA
μA
μA
μA
μA
μA
μA
mV
mV
mV
pF
pF
1000
100
Tj = 60 °C
250
200
10
25 °C
1
150
100
0.1 50
0.01
0
18546
0.2 0.4 0.6 0.8 1 1.2
VF - Forward Voltage (V)
Fig. 1 - Typical Instantaneous Forward Characteristics
100
0
0
20134
25 50 75 100 125 150 175 200
Tamb - Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
10 Tj = 60 °C
1
0.1 Tj = 25 °C
0.01
0
20 40 60 80
18547
VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Characteristics
100
Rev. 1.8, 06-May-13
2 Document Number: 85662
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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